Results 31 to 40 of about 1,462 (180)
Triad-NVM: Persistent-Security for Integrity-Protected and Encrypted Non-Volatile Memories (NVMs)
CoRR, 2018 Emerging Non-Volatile Memories (NVMs) are promising contenders for building future memory systems. On the other side, unlike DRAM systems, NVMs can retain data even after power loss and thus enlarge the attack surface. While data encryption and integrity verification have been proposed earlier for DRAM systems, protecting and recovering secure memories
Amro Awad, Laurent Njilla, Mao Ye 0008
openaire +2 more sources
Advanced Science, EarlyView.An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon +13 more
wiley +1 more source
RangeKV: An Efficient Key-Value Store Based on Hybrid DRAM-NVM-SSD Storage Structure
IEEE Access, 2020 Persistent key-value (KV) stores are an integral part of storage infrastructure in data centers. Emerging non-volatile memory (NVM) technologies are potential alternatives for future memory architecture design.
Ling Zhan +3 more
doaj +1 more source
Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration
Advanced Electronic Materials, EarlyView.Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song +10 more
wiley +1 more source
TLSM: Tiered Log-Structured Merge-Tree Utilizing Non-Volatile Memory
IEEE Access, 2020 Log-Structured Merge-tree (LSM-tree) organizes write-friendly and hierarchical structure, which leads to inevitable disk I/O from data compaction occuring between layers.
Jihwan Lee +4 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
Address Translation Layer for Byte-Addressable Non-Volatile Memory-Based Solid State Drives
IEEE Access, 2019 Because of the need for processing and managing the massive amounts of big data in smart/wearable devices and driverless vehicles, semiconductor companies are focusing on developing byte-addressable non-volatile memory (NVM)-based storage systems.
Se Jin Kwon
doaj +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
The Matrix KV Storage System Based on NVM Devices
Micromachines, 2019 The storage device based on Nonvolatile Memory (NVM devices) has high read/write speed and embedded processor. It is a useful way to improve the efficiency of Key-Value (KV) application.
Tao Cai +4 more
doaj +1 more source
Multi-Clock Snapshot Isolation Concurrency Control for NVM Database
Tsinghua Science and Technology, 2022 Multi-Clock Snapshot Isolation (MCSI) is a concurrency control mechanism that implements snapshot isolation on a single-layer Non-Volatile Memory (NVM) database.
Xuyang Liu +5 more
doaj +1 more source