Results 41 to 50 of about 4,279 (206)
RangeKV: An Efficient Key-Value Store Based on Hybrid DRAM-NVM-SSD Storage Structure
IEEE Access, 2020 Persistent key-value (KV) stores are an integral part of storage infrastructure in data centers. Emerging non-volatile memory (NVM) technologies are potential alternatives for future memory architecture design.
Ling Zhan +3 more
doaj +1 more source
Advanced Materials, EarlyView.Mobile‐atom percolation underlying β‐relaxations fundamentally dictates the crystallization pathways of phase‐change materials. High‐frequency ultrasonic excitation dynamically modulates this critical mobility percolation network, substantially accelerating the crystallization process.
Yu‐Yao Liu +11 more
wiley +1 more source
TLSM: Tiered Log-Structured Merge-Tree Utilizing Non-Volatile Memory
IEEE Access, 2020 Log-Structured Merge-tree (LSM-tree) organizes write-friendly and hierarchical structure, which leads to inevitable disk I/O from data compaction occuring between layers.
Jihwan Lee +4 more
doaj +1 more source
Advanced Science, EarlyView.An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon +13 more
wiley +1 more source
Address Translation Layer for Byte-Addressable Non-Volatile Memory-Based Solid State Drives
IEEE Access, 2019 Because of the need for processing and managing the massive amounts of big data in smart/wearable devices and driverless vehicles, semiconductor companies are focusing on developing byte-addressable non-volatile memory (NVM)-based storage systems.
Se Jin Kwon
doaj +1 more source
Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration
Advanced Electronic Materials, EarlyView.Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song +10 more
wiley +1 more source
Multi-Clock Snapshot Isolation Concurrency Control for NVM Database
Tsinghua Science and Technology, 2022 Multi-Clock Snapshot Isolation (MCSI) is a concurrency control mechanism that implements snapshot isolation on a single-layer Non-Volatile Memory (NVM) database.
Xuyang Liu +5 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada +11 more
wiley +1 more source
Neuromorphic computing using non-volatile memory
Advances in Physics: X, 2017 Dense crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing massively-parallel and highly energy-efficient neuromorphic computing systems.
Geoffrey W. Burr +16 more
doaj +1 more source
In-Memory Computation Based Mapping of Keccak-f Hash Function
Frontiers in Nanotechnology, 2022 Cryptographic hash functions play a central role in data security for applications such as message authentication, data verification, and detecting malicious or illegal modification of data.
Sandeep Kaur Kingra +2 more
doaj +1 more source