Results 151 to 160 of about 31,431,766 (171)

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

Advanced Electronic Materials, Volume 12, Issue 18, 21 September 2026.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci, P. Mannocci, M. Porzani, D. Bridarolli, F. Carletti, M. Farronato, D. Ielmini   +6 more
wiley   +1 more source

A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor

Micromachines, 2022
A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one ...
Yun Seop Yu
exaly   +2 more sources

One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure

Electronics (Switzerland), 2020
This paper presents a one-transistor dynamic random-access memory (1T-DRAM) cell based on a gate-all-around junction-less field-effect transistor (GAA-JLFET) with a Si/SiGe heterostructure for high-density memory applications.
Young Jun Yoon, In Man Kang
exaly   +2 more sources

Machine learning investigation of high-k metal gate processes for dynamic random access memory peripheral transistor

APL Materials
Dynamic random access memory (DRAM) plays a crucial role as a memory device in modern computing, and the high-k/metal gate (HKMG) process is essential for enhancing DRAM’s power efficiency and performance.
Dongwoo Lee, Jinhye Bae
exaly   +2 more sources

Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm

Nature Electronics, 2019
Dynamic random access memory (DRAM) cells are commonly used in electronic devices and are formed from a single transistor and capacitor. Alternative approaches, which are based on the floating body effect, have been proposed that could reduce ...
Cezar Zota, Siegfried Kärg, Lukas Czornomaz   +2 more
exaly   +2 more sources

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Analysis of Grain Boundary Dependent Memory Characteristics in Poly-Si One-Transistor Dynamic Random-Access Memory

Journal of Nanoscience and Nanotechnology, 2021
Hyungsoon Shin, Wookyung Sun, In Man Kang   +2 more
exaly  

Impact Ionization and Hot-Carrier Degradation in Saddle-Fin and Buried-Gate Transistor of Dynamic Random Access Memory at Cryogenic Temperature

IEEE Electron Device Letters, 2021
Yoon Kim, Changhyun Kim, Hyun-Seok Choi   +2 more
exaly  

Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits

Electronics (Switzerland), 2021
Fakhrul Zaman Rokhani, Illani Mohd Nawi, Furqan Zahoor   +2 more
exaly  

Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage

Journal of Nanoscience and Nanotechnology, 2020
Young Jun Yoon, In Man Kang
exaly