Results 141 to 150 of about 431,360 (249)

Recent Advances and Perspectives on Field-Effect Transistors for Artificial Visual Neuromorphic Systems. [PDF]

open access: yesAdv Sci (Weinh)
Yaqian L   +11 more
europepmc   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

open access: yesAdvanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash   +4 more
wiley   +1 more source

Toward Stable and High‐Performance Metal Halide Perovskite Field‐Effect Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
This ToC illustrates the evolution from unstable 3D perovskites with ion migration toward advanced 2D, mixed‐halide, and vacancy‐ordered structures, culminating in stable, high‐performance perovskite field‐effect transistors. ABSTRACT There is a critical need for high‐quality perovskite semiconductor films to enable highly stable field‐effect ...
Muhammad Danish Danial bin Zulkifli   +7 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

open access: yesAdvanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez   +12 more
wiley   +1 more source

Aging and Electrical Stability of DNTT Honey‐Gated OFETs

open access: yesAdvanced Electronic Materials, EarlyView.
DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira   +8 more
wiley   +1 more source

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