Results 101 to 110 of about 2,890 (229)

Advances in optoelectronic artificial synapses

open access: yesCell Reports Physical Science, 2022
Ying Li, Guozhen Shen
openaire   +1 more source

An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

open access: yesAdvanced Electronic Materials, 2019
AbstractThe rapid development of artificial intelligence technology has led to the urge for artificial optoelectronic synapses with visual perception and memory capabilities. A new type of artificial optoelectronic synapse, namely a photoelectric memcapacitor, is proposed and demonstrated.
Lei Zhao   +13 more
openaire   +1 more source

Molecular Sieve Promoted Growth of Ferroelectric Trilayer 3R‐MoS2 for Polarization‐Dependent Reconfigurable Optoelectronic Synapses

open access: yesAdvanced Science, EarlyView.
The noncentrosymmetric trilayer rhombohedral‐stacked MoS2 nanoflakes with enhanced sliding ferroelectric properties are synthesized via a molecular sieve‐assisted chemical vapor deposition process. The switchable polarization states, combined with the exceptional light/gate voltage modulated electrical properties of these nanoflakes, enable broadband ...
Qichao Xue   +11 more
wiley   +1 more source

IGZO-Based First Spike Timing Tactile Encoders and Coupling-Enhanced Transistor Synapses for Efficient Spiking Neural Networks. [PDF]

open access: yesAdv Sci (Weinh)
Here, a bioinspired light‐accelerated neuromorphic system that seamlessly links tactile sensing, first‐spike‐timing (FST) encoding, and light–electric synaptic learning. Pressure stimuli trigger FST spikes in dual‐gate PDTFTs, while GaOx/IGZO hetero‐synapses exhibit enhanced memory under optical–electrical co‐activation, enabling spiking neural ...
Cai D   +9 more
europepmc   +2 more sources

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

open access: yesAdvanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu   +4 more
wiley   +1 more source

Adaptation controls synchrony and cluster states of coupled threshold-model neurons

open access: yes, 2013
We analyze zero-lag and cluster synchrony of delay-coupled non-smooth dynamical systems by extending the master stability approach, and apply this to networks of adaptive threshold-model neurons.
Dahms, Thomas   +5 more
core   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong   +4 more
wiley   +1 more source

Electrode‐Engineered Dual‐Mode Multifunctional Lead‐Free Perovskite Optoelectronic Memristors for Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos   +4 more
wiley   +1 more source

Triboelectric Tactile Transducers for Neuromorphic Sensing and Synaptic Emulation: Materials, Architectures, and Interfaces

open access: yesAdvanced Energy and Sustainability Research, EarlyView.
Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar   +2 more
wiley   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

open access: yesAdvanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan   +5 more
wiley   +1 more source

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