Results 161 to 170 of about 73,294 (300)

Controlling Film Formation in Inkjet‐printed MAPbBr3 Through Graphene Incorporation for Enhanced Photodetection

open access: yesAdvanced Materials Technologies, EarlyView.
This work highlights the impact of incorporating graphene nanoflakes into precursor inks of MAPbBr3 for inkjet‐printed optoelectronic device applications. A substantial modification of the crystallization dynamics is reported despite miniscule concentrations.
Kenneth Lobo   +12 more
wiley   +1 more source

Decoupling the Impact of Deep‐Trap and Band‐Tail States on PbS Quantum Dot Photodetectors via Alkylamine Engineering

open access: yesAdvanced Materials Technologies, EarlyView.
Band‐tail and deep trap states are effectively disentangled through the use of selective alkylamine additives. PA‐driven 2D ordering narrows band tails, while HA enhances halide passivation and Pb coordination to suppress deep traps. A comparative study of their CQD short‐wave infrared (SWIR) photodetectors further reveals whether band‐tail states or ...
Huaying Zhong   +14 more
wiley   +1 more source

Coupling of Er3+ ions and Plasmonic Modes in Vertical Nanocavities for Spectral Broadening in Telecom Bands

open access: yesAdvanced Materials Technologies, EarlyView.
Left: Illustration of the glass & nanostructures system and the NIR emission at 1.5 µm, where the colored spheres represent the Er3+ ions within the doped glass. Right: Representation of the Stark splitting of the 4I13/2 and 4I15/2 manifolds of the Er3+, illustrating how the plasmonic modes facilitate the emission from the broader Stark manifold ...
Gaston Lozano Calderón   +5 more
wiley   +1 more source

Bidirectional Process Prediction in the Laser‐Induced‐Graphene Production Using Blackbox Deep Learning

open access: yesAdvanced Materials Technologies, EarlyView.
This study shows that a lightweight blackbox neural network provides a practical, cost‐effective solution for bidirectional process prediction in laser‐induced graphene (LIG) fabrication. Achieving high predictive performance with minimal overhead, the approach democratizes machine learning (ML) for resource‐limited environments.
Maxim Polomoshnov   +3 more
wiley   +1 more source

Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

open access: yesAdvanced Materials Technologies, EarlyView.
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi   +7 more
wiley   +1 more source

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