Results 1 to 10 of about 112,711 (289)

The role of oxygen vacancies in the electronic and optical properties of κ-Ga2O3 [PDF]

Communications Chemistry
Oxygen vacancies are regarded as crucial defects greatly affecting the electronic and optical properties of oxide films and devices, yet systematic studies on κ-Ga2O3 are still lacking.
Wenyong Feng, Paiwen Fang, Yiming Zhang, Danfeng Zhu, Jun Liang, Zedong Lin, Xiaozeng Wang, Yanli Pei   +7 more
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Extended planar defects of oxygen vacancies in ferroelectric $$\hbox {BaTiO}_3$$ BaTiO 3 and impact on ferroelectricity [PDF]

Scientific Reports, 2023
Extended defects of vacancies in ferroelectrics (FE), where vacancies spread over an extended space, are of critical importance in terms of understanding the long-standing problems such as polarization fatigue and aging.
Shaohui Qiu, Huaxiang Fu
doaj   +2 more sources

Controlled manipulation of oxygen vacancies using nanoscale flexoelectricity [PDF]

Nature Communications, 2017
Oxygen vacancies, especially their distribution, are directly coupled to the electromagnetic properties of oxides and related emergent functionalities that have implication in device applications.
Cao, Ye, Chen, Long-Qing, Cho, Myung Rae, Das, Saikat, Kalinin, Sergei V., Kim, Minu, Noh, Tae Won, Shin, Yeong Jae, Wang, Bo, Wang, Lingfei, Yang, Sang Mo   +10 more
core   +8 more sources

Oxygen Vacancies on Hydrated Anatase (101) Surfaces: Insights from Classical and Ab Initio Molecular Dynamics Simulations [PDF]

Nanomaterials
Hydrated anatase (101) titanium dioxide surfaces with oxygen vacancies have been studied using a combination of classical and ab initio molecular dynamics simulations.
Fredrik Grote, Alexander Lyubartsev
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Roles of Oxygen Vacancies in NiMoO4: A First-Principles Study

Frontiers in Energy Research, 2021
Oxygen vacancy has been suggested to play a role in the electrochemical ability of NiMoO4. The band structure and density of state of NiMoO4 bulks with different concentrations of oxygen vacancy were investigated by the first-principles calculation ...
Yuanbin Wen, Yuanbin Wen, Pengcheng Wang, Pengcheng Wang, Xinying Ding, Xinying Ding, Xiaobo Feng, Xiaobo Feng, Chen Qing, Chen Qing   +9 more
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Oxygen vacancies modulated Co3O4 toward highly efficient electrooxidation of 5-hydroxymethylfurfural

Results in Engineering, 2023
Electrochemical oxidation of 5-hydroxymethylfurfural (HMF) has emerged as a promising method to produce highly valuable chemicals. Co-based electrocatalysts with oxygen vacancies are one of the most promising candidates. However, the relationship between
Guangjian Song, Liuhua Mu, Panzhe Qiao, Li Yang, Min Zhang, Fangfang Dai, Lixiong Dai, Hao Wu, Zhonggui Gao, Guosheng Shi, Sanzhao Song   +10 more
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Real-Time Identification of Oxygen Vacancy Centers in LiNbO₃ and SrTiO₃ during Irradiation with High Energy Particles

Crystals, 2021
Oxygen vacancies are known to play a central role in the optoelectronic properties of oxide perovskites. A detailed description of the exact mechanisms by which oxygen vacancies govern such properties, however, is still quite incomplete.
Miguel L. Crespillo, Joseph T. Graham, Fernando Agulló-López, Yanwen Zhang, William J. Weber   +4 more
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Formation mechanism and roles of oxygen vacancies in melt-grown Al2O3/GdAlO3/ZrO2 eutectic ceramic by laser 3D printing

Journal of Advanced Ceramics, 2022
Laser three-dimensional (3D) printing has become a significant technique to fabricate high-performance Al2O3-based eutectic ceramics based on melt growth.
Haifang Liu, Haijun Su, Zhonglin Shen, Hao Jiang, Di Zhao, Yuan Liu, Yinuo Guo, Xiang Li, Min Guo, Jun Zhang, Lin Liu, Hengzhi Fu   +11 more
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The role of oxygen vacancies on resistive switching properties of oxide materials

AIMS Materials Science, 2020
Tuning the level of oxygen vacancies in metal oxide materials is a promising approach to enhance resistive switching properties towards memory applications.
Hang Meng, Shihao Huang, Yifeng Jiang
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Mechanisms of Oxygen Vacancy Aggregation in SiO2 and HfO2

Frontiers in Physics, 2019
Dielectric oxide films in electronic devices undergo significant structural changes during device operation under bias. These changes are usually attributed to aggregation of oxygen vacancies resulting in formation of oxygen depleted regions and ...
David Z. Gao, David Z. Gao, David Z. Gao, Jack Strand, Manveer S. Munde, Manveer S. Munde, Alexander L. Shluger   +6 more
doaj   +1 more source