Results 251 to 260 of about 112,711 (289)

Oxygen vacancies enhancing acetone-sensing performance

Materials Today Chemistry, 2020
Abstract Cd-doped In2O3 was synthesized by a facile solvothermal, template-free preparation method. The phase structure and properties were characterized by various methods. The surface of Cd-doped In2O3 became coarse compared with that of pure In2O3, according to the scanning electron microscopeimages, which enhanced the ability to absorb the gas ...
Xiangyan Hou, Huanhuan Liu, Yimeng Zhang, Mengpei Jiang, Long Yuan, Jingyu Shi, Changmin Hou   +6 more
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Oxygen vacancy boosted photocatalytic decomposition of ciprofloxacin over Bi2MoO6: Oxygen vacancy engineering, biotoxicity evaluation and mechanism study

Journal of Hazardous Materials, 2019
Herein, efficient visible light driven photocatalytic degradation of ciprofloxacin was realized over Bi2MoO6 with oxygen vacancies (OVs) which can be tunably introduced through a facile solvothermal method via the modulation of tetramethylethylenediamine (TMEDA).
Xiao Xu, Xing Ding, Xianglong Yang, Pei Wang, Shu Li, Zhexue Lu, Hao Chen   +6 more
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Iron-vacancy-oxygen complex in silicon

Journal of Applied Physics, 1988
The interaction between iron and defects produced by electron irradiation in iron-doped silicon has been observed by using deep-level transient spectroscopy. A new electron trap level due to the iron-vacancy-oxygen complex [Fe+(V⋅O)] was detected at Ec−0.36 eV.
Zhi-pu You, Min Gong, Ji-yong Chen, J. W. Corbett   +3 more
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β particles induced directional inward migration of oxygen vacancies: Surface oxygen vacancies and interface oxygen vacancies synergistically activate PMS

Applied Catalysis B: Environmental, 2022
Xinyu Hu, Juntao Wang, Jing Wang, Yao Deng, Huidi Zhang, Tao Xu, Wenlei Wang   +6 more
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Oxygen vacancy kinetics in ferroelectric PbZr0.4Ti0.6O3

Journal of Applied Physics, 2008
Oxygen vacancy kinetics in ferroelectric PbZr0.4Ti0.6O3 were studied by oxygen18 (O18) tracer self-diffusion in epitaxial thin films as well as bulk polycrystalline samples. O18 exchange annealing was carried out at an oxygen partial pressure of 250mbar and temperatures between 250 and 400°C.
S. Gottschalk, H. Hahn, S. Flege, A. G. Balogh   +3 more
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Oxygen-vacancy ordering in Y2Ba4Cu7O15−ε

Applied Physics Letters, 1991
Y2Ba4Cu7O15−ε samples prepared at high oxygen pressures were investigated by means of electron microscopy. Often grains show modulations along the a[100] direction, identified as oxygen-vacancy chain ordering of the type previously observed in the 123 compound.
T. Krekels, G. Van Tendeloo, S. Amelinckx, J. Karpinski, E. Kaldis, S. Rusiecki   +5 more
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Oxygen Vacancy Motion in Perovskite Oxides

Journal of the American Ceramic Society, 1996
Using electron paramagnetic resonance, the motion of oxygen vacancies within the oxygen octahedron in perovskite BaTiO 3 is observed via the alignment of oxygen vacancyrelated defect dipoles induced by bias/heat combinations. The vacancy motion is found to have an activation energy of 0.91 eV,
William L. Warren, Karel Vanheusden, Duane Dimos, Gordon E. Pike, Bruce A. Tuttle   +4 more
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EELS imaging of oxygen vacancy ordering

Microscopy and Microanalysis, 2008
Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7 ...
J Gazquez, M Varela, MP Oxley, MA Torija, M Sharma, C Leighton, SJ Pennycook   +6 more
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Oxygen Vacancy: The Invisible Agent on Oxide Surfaces

ChemPhysChem, 2003
Pretty vacant. Oxide surfaces are continuously finding new applications in advanced technologies such as corrosion protection, thermal coating, catalysis, sensors, microelectronics, magnetic properties, etc. A understanding of the microscopic properties of oxide surfaces is closely related to the identification of the surface defects. Oxygen vacancies (
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Oxygen vacancies in high-k oxides

Microelectronic Engineering, 2007
High dielectric constant (K) gate oxides such as HfO"2 have suffered from charge trapping, threshold voltage shifts and a difficulty of metal or poly-Si gates to achieve band edge work function values. We investigate how these are related to the oxygen vacancies in a series of ab-initio calculations.
K. Tse, D. Liu, K. Xiong, J. Robertson
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