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Oxygen Vacancy Migration in MLCCS
Pan Pacific Symposium, 2018ABSTRACT The multilayer ceramic capacitor (MLCC) has become a widely used electronics component. The MLCC technologies have gone through a number of material and process changes such as the shift from precious metal electrode (PME) configurations which were predominantly silver/palladium to base metal electrodes (BME) dominated by ...
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The Oxygen Vacancy in Crystal Phases of WO3 [PDF]
The Journal of Physical Chemistry B, 2005 The oxygen vacancy in WO(3) has previously been implicated in the electrochromism mechanism in this material. Previous theoretical calculations on the oxygen vacancy in WO(3) have not considered the full range of crystal structures adopted by the material. Here we report studies of the oxygen vacancy in seven crystal phases.
Chadwick, Alan V. +3 more
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On the identification of the oxygen vacancy in HfO2
Microelectronic Engineering, 2011The single positively charge oxygen vacancy in HfO"2 is found to undergo a symmetry breaking distortion to a C"2"v symmetry, driven by electron localization, which is consistent with the experimentally observed electron spin resonance signal. This completes the identity of the oxygen vacancy defect in HfO"2 and ZrO"2 as the active defect that affects ...
S.J. Clark, L. Lin, J. Robertson
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Surface Science, 1996
Abstract The electronic and atomic structures of nondashstoichiometric MgO {100} surfaces, with several densities of neutral oxygen vacancies, have been studied using a semi-empirical Hartree-Fock method associated with a geometry optimization code. The oxygen vacancies are periodically repeated in the surface top layer with equal spacings.
E. Castanier, C. Noguera
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Abstract The electronic and atomic structures of nondashstoichiometric MgO {100} surfaces, with several densities of neutral oxygen vacancies, have been studied using a semi-empirical Hartree-Fock method associated with a geometry optimization code. The oxygen vacancies are periodically repeated in the surface top layer with equal spacings.
E. Castanier, C. Noguera
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Properties of the oxygen vacancy in ZnO
Applied Physics A, 2007As-grown ZnO bulk crystals and crystals annealed in vacuum, oxygen, or zinc vapour were characterized by electrical, optical and magnetic resonance spectroscopy. The experiments show that the residual carrier concentration is caused by residual H, Al, Ga and oxygen vacancies (VO) in the material.
D.M. Hofmann +7 more
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Oxygen vacancy chemistry in oxide cathodes
Chemical Society ReviewsThis review focuses on the chemical thermodynamics and reaction kinetics of intrinsic and anionic redox-mediated oxygen vacancies in oxide cathodes.
Yu-Han Zhang +8 more
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Oxygen vacancies in lithium niobate
Applied Physics Letters, 1983Optical absorption peaks at 760 and 500 nm in LiNbO3 are assigned to oxygen vacancies containing one and two electrons, respectively. The 500-nm band appears after annealing above approximately 500 °C in a vacuum, i.e., a reducing atmosphere, and continues to grow with increasing anneal temperature.
K. L. Sweeney, L. E. Halliburton
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Oxygen Vacancy: The Invisible Agent on Oxide Surfaces
ChemPhysChem, 2003Pretty vacant. Oxide surfaces are continuously finding new applications in advanced technologies such as corrosion protection, thermal coating, catalysis, sensors, microelectronics, magnetic properties, etc. A understanding of the microscopic properties of oxide surfaces is closely related to the identification of the surface defects. Oxygen vacancies (
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Oxygen Vacancies in Barium Oxide
Physical Review, 1953It has been shown by Dash that an optical absorption band at 2.0 ev occurs in BaO crystals when these are treated in barium or other metal vapors, giving the crystals a blue color. In order to determine the way the stoichiometric excess of metal is present in the lattice, the diffusion of the blue coloration into BaO has been measured over the range ...
R. L. Sproull, R. S. Bever, G. Libowitz
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Evidence for a vacancy–phosphorus–oxygen complex in silicon
Journal of Physics: Condensed Matter, 2008Low-energy (∼0.5 MeV) electrons arising from (60)Co γ-irradiation were used to create phosphorus-vacancy (PV) pairs and oxygen-vacancy pairs in Czochralski-grown Si. Positron annihilation data show that PV pairs anneal in two stages: the commonly observed stage around 125 °C, where one third of the pairs disappear with an activation energy of 0.8 ± 0.2
S, Dannefaer, G, Suppes, V, Avalos
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