Results 251 to 260 of about 48,017 (305)
Tuning Oxygen Vacancies in Oxides by Configurational Entropy
ACS Applied Materials & Interfaces, 2023 Tuning surface oxygen vacancies is important for oxide catalysts. Doping elements with different chemical valence states or different atomic radii into host oxides is a common method to create oxygen vacancies. However, the concentration of oxygen vacancies in oxide catalysts is still limited to the amount of foreign dopants that can be tolerated ...
Mengyuan Zhang +10 more
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Interaction of oxygen vacancies in yttrium germanates
Physical Chemistry Chemical Physics, 2012 Forming a good Ge/dielectric interface is important to improve the electron mobility of a Ge metal oxide semiconductor field-effect transistor. A thin yttrium germanate capping layer can improve the properties of the Ge/GeO(2) system. We employ electronic structure calculations to investigate the effect of oxygen vacancies in yttrium-doped GeO(2) and ...
Wang, Hao +3 more
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Oxygen vacancies in lithium tantalate
Physical Review B, 1985Lithium tantalate crystals turn ``black'' when annealed above approximately 850 \ifmmode^\circ\else\textdegree\fi{}C in an argon atmosphere. The resulting optical absorption spectrum has a distinct peak at 460 nm but also extends through the entire visible and near ultraviolet.
, Kappers +3 more
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Applied Physics Letters, 2005
The electronic properties of ZnO have traditionally been explained by invoking intrinsic defects. In particular, the frequently observed unintentional n-type conductivity has often been attributed to oxygen vacancies. We report first-principles calculations showing that the oxygen vacancy VO is not a shallow donor, but has a deep e(2+∕0) level at ∼1 ...
Anderson Janotti, Chris G. Van de Walle
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The electronic properties of ZnO have traditionally been explained by invoking intrinsic defects. In particular, the frequently observed unintentional n-type conductivity has often been attributed to oxygen vacancies. We report first-principles calculations showing that the oxygen vacancy VO is not a shallow donor, but has a deep e(2+∕0) level at ∼1 ...
Anderson Janotti, Chris G. Van de Walle
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2008 17th IEEE International Symposium on the Applications of Ferroelectrics, 2008
Oxygen vacancy clustering in SrTiO3-? thin films has been investigated by electrical transport and photoemission spectroscopy. We deposited SrTiO3-? thin films on LaAlO3(001) substrate at reducing oxygen ambients. The carrier density did not increase with decreasing the ambient oxygen pressure.
null Euiyoung Choi +3 more
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Oxygen vacancy clustering in SrTiO3-? thin films has been investigated by electrical transport and photoemission spectroscopy. We deposited SrTiO3-? thin films on LaAlO3(001) substrate at reducing oxygen ambients. The carrier density did not increase with decreasing the ambient oxygen pressure.
null Euiyoung Choi +3 more
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Physica B: Condensed Matter, 2003
Abstract We present our investigations on the absorption and emission properties of the neutral oxygen vacancy in ZnO. Temperature-dependent photoluminescence (PL) experiments allow to determine the zero-phonon-energy of the emission and its phonon-coupling parameters.
F. Leiter +5 more
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Abstract We present our investigations on the absorption and emission properties of the neutral oxygen vacancy in ZnO. Temperature-dependent photoluminescence (PL) experiments allow to determine the zero-phonon-energy of the emission and its phonon-coupling parameters.
F. Leiter +5 more
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Radiation Effects and Oxygen Vacancies in Silicates
Science, 1970Proton and electron irradiation of silicates, minerals, and rocks produces a paramagnetic defect whose resonance spectrum is identical to that of the singly charged oxygen vacancy in silica glass and α-quartz. It is suggested that this defect is characteristic of all structures containing SiO 4 tetrahedra.
A, Chatelain, J L, Kolopus, R A, Weeks
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Oxygen Vacancy Engineering in Photocatalysis
Solar RRL, 2020Photocatalysis, which converts natural solar energy into chemical energy, has emerged as one of the most appealing technologies in the past decades. However, photocatalytic performances are limited by the poor absorption of visible light, charge‐carrier recombination during migration, and a high energy barrier for activating reactants. Oxygen vacancies
Yanmei Huang, Yu Yu, Yifu Yu, Bin Zhang
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Vacancy–oxygen complex in Ge crystals
Physica B: Condensed Matter, 2003Vacancy-oxygen (VO) complexes in Ge crystals have been studied by means of high-resolution infrared absorption and deep-level transient spectroscopy (Laplace DLTS) measurements. It is argued that the VO center in Ge has three charge states: double negative (VO--), single negative (VO -) and neutral (VO0) with the corresponding energy levels at E( - /-)
Markevich, V. P. +7 more
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