Results 251 to 260 of about 115,078 (291)

Properties of the oxygen vacancy in ZnO

Applied Physics A, 2007
As-grown ZnO bulk crystals and crystals annealed in vacuum, oxygen, or zinc vapour were characterized by electrical, optical and magnetic resonance spectroscopy. The experiments show that the residual carrier concentration is caused by residual H, Al, Ga and oxygen vacancies (VO) in the material.
D.M. Hofmann, D. Pfisterer, J. Sann, B.K. Meyer, R. Tena-Zaera, V. Munoz-Sanjose, T. Frank, G. Pensl   +7 more
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Oxygen vacancies in lithium niobate

Applied Physics Letters, 1983
Optical absorption peaks at 760 and 500 nm in LiNbO3 are assigned to oxygen vacancies containing one and two electrons, respectively. The 500-nm band appears after annealing above approximately 500 °C in a vacuum, i.e., a reducing atmosphere, and continues to grow with increasing anneal temperature.
K. L. Sweeney, L. E. Halliburton
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Oxygen Vacancies in Barium Oxide

Physical Review, 1953
It has been shown by Dash that an optical absorption band at 2.0 ev occurs in BaO crystals when these are treated in barium or other metal vapors, giving the crystals a blue color. In order to determine the way the stoichiometric excess of metal is present in the lattice, the diffusion of the blue coloration into BaO has been measured over the range ...
R. L. Sproull, R. S. Bever, G. Libowitz
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Ferroic nanoclusters in relaxors: the effect of oxygen vacancies

Journal of Physics: Condensed Matter, 2007
Single crystals of PbSc(0.5)Ta(0.5)O(3) with suppressed and enhanced oxygen deficiencies and different degrees of long-range B-site ordering were studied by Raman spectroscopy in order to clarify the significance of the different factors for the formation and growth of ferroic clusters in relaxors.
Mihailova, B., Gospodinov, M., Güttler, B., Petrova, D., Stosch, R., Bismayer, U.   +5 more
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Oxygen Vacancy: The Invisible Agent on Oxide Surfaces

ChemPhysChem, 2003
Pretty vacant. Oxide surfaces are continuously finding new applications in advanced technologies such as corrosion protection, thermal coating, catalysis, sensors, microelectronics, magnetic properties, etc. A understanding of the microscopic properties of oxide surfaces is closely related to the identification of the surface defects. Oxygen vacancies (
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Evidence for a vacancy–phosphorus–oxygen complex in silicon

Journal of Physics: Condensed Matter, 2008
Low-energy (∼0.5 MeV) electrons arising from (60)Co γ-irradiation were used to create phosphorus-vacancy (PV) pairs and oxygen-vacancy pairs in Czochralski-grown Si. Positron annihilation data show that PV pairs anneal in two stages: the commonly observed stage around 125 °C, where one third of the pairs disappear with an activation energy of 0.8 ± 0.2 
S, Dannefaer, G, Suppes, V, Avalos
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Design of Oxygen Vacancy Configuration for Memristive Systems

ACS Nano, 2017
Oxide-based valence-change memristors are promising nonvolatile memories for future electronics that operate on valence-change reactions to modulate their electrical resistance. The memristance is associated with the movement of oxygen ionic carriers through oxygen vacancies at high electric field strength via structural defect modifications that are ...
Rafael Schmitt, Jonathan Spring, Roman Korobko, Jennifer L.M. Rupp   +3 more
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The oxygen vacancy in Ga2O3: a double resonance investigation

Magnetic Resonance in Chemistry, 2005
When produced under reducing conditions, beta-Ga2O3 is transformed into an n-type semiconductor with delocalized conduction electrons that exhibit a very strong electron spin resonance (ESR) and a strong hyperfine coupling to the gallium nuclei of the host lattice. We apply the Overhauser-shift technique to investigate single crystals of this compound.
H J, Kümmerer, G, Denninger
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Oxygen vacancy diffusion in bare ZnO nanowires

Nanoscale, 2014
Oxygen vacancies (VO) are known to be common native defects in zinc oxide (ZnO) and to play important roles in many applications.
Bei, Deng, Andreia, Luisa da Rosa, Th, Frauenheim, J P, Xiao, X Q, Shi, R Q, Zhang, Michel A, Van Hove   +6 more
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Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon

Physical Review B, 2007
After low dose electron irradiation, annealing kinetics of divacancy-oxygen (V{sub 2}O) and vacancy-oxygen (VO) complexes in carbon-lean n-type magnetic Czochralski (MCZ) and diffusion-oxygenated float-zone (DOFZ) Si samples has been studied in detail. The samples were of n type with a phosphorus doping concentration in the 10{sup 12} cm{sup -3} range,
M. Mikelsen, J. H. Bleka, J. S. Christensen, E. V. Monakhov, B. G. Svensson, J. Härkönen, B. S. Avset   +6 more
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