Results 51 to 60 of about 48,017 (305)
Electronic and Magnetic Properties Studies on Mn and Oxygen Vacancies Codoped Anatase TiO2
Advances in Condensed Matter Physics, 2016 The electronic and magnetic properties of Mn and oxygen vacancies codoped anatase TiO2 were investigated. The calculated results showed that the TiO2 codoped with Mn and oxygen vacancies have a magnetic moment value of 3.415 μB per Ti31MnO63 supercell ...
Zhongpo Zhou +4 more
doaj +1 more source
Colossal oxygen vacancy formation at a fluorite-bixbyite interface
Nature Communications, 2020 Oxygen vacancies can impart interesting properties in complex oxides, but specific architectures designed to create high-density oxygen vacancies are largely unknown.
Dongkyu Lee +16 more
doaj +1 more source
JPhys EnergyOver the last few years, keen interest has been taken in creating and tuning the concentration of oxygen vacancies in electrode materials to enhance their performance and to develop next-generation rechargeable batteries.
Sandeep Kumar Sundriyal, Yogesh Sharma
doaj +1 more source
On the Relative Stability of Near-Surface Oxygen Vacancies at the CeO2(111) Surface upon Zr Doping
, 2019 Ceria (CeO2)-based materials are of great importance in numerous technological applications such as three-way catalysts (TWCs) [Catal. Today 62, 35-50 (2000) and Chem. Rev. 116, 5987-6041 (2016)], hydrocarbon reforming [Chem. Rev.
G. S., Otero +3 more
core +1 more source
Advanced Engineering Materials, Volume 27, Issue 6, March 2025.ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur +5 more
wiley +1 more source
Passivation of oxygen vacancy states in HfO2 by nitrogen [PDF]
Journal of Applied Physics, 2006 Nitrogen is known to reduce leakage currents and charge trapping in high-dielectric-constant gate oxides such as HfO2. We show that this occurs because nitrogen, substituting for oxygen atoms next to oxygen vacancy sites, repels the occupied gap states due to the neutral and positively charged oxygen vacancies out of the band gap into its conduction ...
Xiong, K., Robertson, J., Clark, S.J.
openaire +3 more sources
Advanced Engineering Materials, EarlyView.This study demonstrates an efficient recycling route for out‐of‐spec AlSi10Mg atomized powders through compaction and arc remelting followed by suction casting. By correlating compaction load, cooling rate, and resulting microstructure, we show that intermediate pressures (50–80 kN) and rapid cooling refine dendrites, reduce porosity, and enhance ...
Mila Christy de Oliveira +4 more
wiley +1 more source
Science and Technology of Advanced Materials, 2015 Oxygen vacancies have been considered as the origin of threshold voltage instability under negative bias illumination stress in amorphous oxide thin film transistors.
Young Jun Oh +2 more
doaj +1 more source
Oxygen vacancies at Ni/c-ZrO2 interfaces
, 2003 The interaction between Ni(001) and cubic-ZrO2(001) surfaces is investigated, focusing on the role of the O vacancies that actually exist in the c-ZrO2 phase stabilized at room temperature. Ab-initio calculations of the electronic charge distribution are
Beltrán Fínez, Juan Ignacio +3 more
core +1 more source
Advanced Engineering Materials, EarlyView.A flexure‐based variable stiffness structure is developed by integrating phase‐change modulation and adhesive interfacial locking of gallium. The design enables a wide stiffness variability, transitioning from soft, flexible behavior to rigid, load‐supporting performance.
Sungjin Kim +2 more
wiley +1 more source