Results 71 to 80 of about 1,197,791 (266)

Materials‐Driven Additive Manufacturing for Electrical Machines: Qualification‐Oriented Design Beyond Geometric Freedom

Advanced Engineering Materials, EarlyView.
This perspective reframes additive manufacturing for electrical machines as a qualification‐limited materials and architecture design problem. It links process–structure–property–performance relationships to magnetic, conducting, dielectric, and thermal property windows, highlighting where AM can enable segmented magnetic circuits, permanent magnet ...
Dénes Fodor, Loránd Szabó
wiley   +1 more source

Effect of oxygen vacancy modification on electrical properties of La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 high-entropy perovskite oxide films

AIP Advances
The epitaxial La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 (L5BO3) thin films with varying oxygen vacancies were prepared on (001) SrTiO3 substrates in this work. These thin films exhibit a high degree of crystallinity and prominent semiconductor characteristics. The
Xin Yuan, Sheung Mei Ng, PeiGen Li, JingMing Liang, Hon Fai Wong, ChuangShi Feng, Shuai Nan, HongQuan Song, Zhou Guan, FuXiang Zhang, Chi Wah Leung   +10 more
doaj   +1 more source

Vacancies, Hirings, and the Duration Function [PDF]

While the matching function relates hirings (H) to vacancies (V) and unemployment, the duration function relates the average duration of vacancies as measured by V/H to unemployment.
Farm, Ante
core  

Femtosecond visualization of oxygen vacancies in metal oxides. [PDF]

, 2020
Oxygen vacancies often determine the electronic structure of metal oxides, but existing techniques cannot distinguish the oxygen-vacancy sites in the crystal structure.

core   +2 more sources

Cryogenic Deformation Behavior of TiAl and Insights Into Embrittlement After High‐Temperature Exposure Combined With Secondary Ion Mass Spectroscopy of Near Surface Chemistry

Advanced Engineering Materials, EarlyView.
Near‐surface deuterium enrichment profiles for different microstructural types of TiAl after exposure at 700 °C in a heavy water‐containing environment. The deuterium levels are significantly higher than expected from natural occurrence, indicating that the heavy water dissociated during the exposure treatment and entered the specimens.
Jonathan D. H. Paul, Alexander Welle, Dirk Matthiessen, Michael Oehring, Fritz Appel, Florian Pyczak   +5 more
wiley   +1 more source

Influence of carbon impurities and oxygen vacancies in Al2O3 film on Al2O3/GaN MOS capacitor characteristics

AIP Advances, 2018
Effects of carbon impurities and oxygen vacancies in Al2O3 film on the characteristics of Al2O3/GaN MOS capacitors were studied using the different atomic layer deposition (ALD) precursor and high-pressure water vapor annealing (HPWVA).
Mutsunori Uenuma, Kiyoshi Takahashi, Sho Sonehara, Yuta Tominaga, Yuta Fujimoto, Yasuaki Ishikawa, Yukiharu Uraoka   +6 more
doaj   +1 more source

Rotary 3D Printing With Integrated Electroplating

Advanced Engineering Materials, EarlyView.
A rotary material extrusion platform integrates localized copper electroplating with printing and encapsulation to fabricate cylindrical polymer–metal structures containing fully embedded, low‐resistance conductive pathways that enable internal Joule heating and thermally activated shape‐memory responses.
Antonio Zagaria, Nicola Larovere, Moslem Mohammadi, Gianluca Percoco, Ali Zolfagharian, Gianni Stano   +5 more
wiley   +1 more source

A Theory of Vacancies [PDF]

This paper is, firstly, a reappraisal of the matching function, arguing that the proper specification of the relation between hirings (H), vacancies (V), and unemployment is the duration function, which shows how average recruitment times as measured by ...
Farm, Ante
core  

S‐modified oxygen vacancies in iron‐cobalt oxide nanosheets: Enabling extremely high activity of oxygen evolution reaction for achieving industrial water splitting benchmark

, 2020
The oxygen vacancies of defective iron–cobalt oxide (FeCoO-Vo) nanosheets are modified by the homogeneously distributed sulfur (S) atoms. S atoms can not only effectively stabilize oxygen vacancies (Vo), but also form the Co−S coordination with Co active
Yang, D, Li, M, Yi Jia, Wang, Xin, Xiangdong Yao, Xin Wang, Linzhou Zhuang, Yao, X, Zhiheng Li, Zhu, Z, Zhang, Longzhou, Zhuang, L, Wang, X, Yao, Xiangdong, Jia, Yi, Mengran Li, Zhuang, Linzhou, Zhonghua Zhu, Hongli Liu, Li, Zhiheng, Liu, H, Longzhou Zhang, Dongjiang Yang, Li, Z, Jia, Y, Zhang, L, Liu, Hongli, Zhu, Zhonghua, Yang, Dongjiang   +28 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source