High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT. [PDF]
Dai JJ +8 more
europepmc +1 more source
Large Language Model in Materials Science: Roles, Challenges, and Strategic Outlook
Large language models (LLMs) are reshaping materials science. Acting as Oracle, Surrogate, Quant, and Arbiter, they now extract knowledge, predict properties, gauge risk, and steer decisions within a traceable loop. Overcoming data heterogeneity, hallucinations, and poor interpretability demands domain‐adapted models, cross‐modal data standards, and ...
Jinglan Zhang +4 more
wiley +1 more source
Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion. [PDF]
Zhai L +13 more
europepmc +1 more source
Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO2 Nanosphere Mask Lithography with the Dip-Coating Method. [PDF]
Yue W +5 more
europepmc +1 more source
Data‐Guided Photocatalysis: Supervised Machine Learning in Water Splitting and CO2 Conversion
This review highlights recent advances in supervised machine learning (ML) for photocatalysis, emphasizing methods to optimize photocatalyst properties and design materials for solar‐driven water splitting and CO2 reduction. Key applications, challenges, and future directions are discussed, offering a practical framework for integrating ML into the ...
Paul Rossener Regonia +1 more
wiley +1 more source
Research on the Degradation and Failure Mechanisms of the Unclamped-Inductive-Switching Characteristics of p-GaN HEMT Devices. [PDF]
Liu L, Zhen Y, Li S, Pang B, Zeng K.
europepmc +1 more source
Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator. [PDF]
Chiu HC +7 more
europepmc +1 more source
Large Language Model‐Based Chatbots in Higher Education
The use of large language models (LLMs) in higher education can facilitate personalized learning experiences, advance asynchronized learning, and support instructors, students, and researchers across diverse fields. The development of regulations and guidelines that address ethical and legal issues is essential to ensure safe and responsible adaptation
Defne Yigci +4 more
wiley +1 more source
Reconfiguring hot-hole flux via polarity modulation of p-GaN in plasmonic Schottky architectures. [PDF]
Lee H +5 more
europepmc +1 more source
E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology. [PDF]
Jia LF +7 more
europepmc +1 more source

