Results 291 to 300 of about 21,020,521 (317)

p- GaN surface treatments for metal contacts

Applied Physics Letters, 2000
The chemical bonding and electronic properties of wet, chemically treated p-GaN surfaces were studied using synchrotron radiation photoemission spectroscopy. Chlorine-based chemical bonding was identified on the conventional HCl-treated p-GaN surface, which is associated with a shift of the surface Fermi level toward the conduction band edge by ∼0.9 eV
Jingxi Sun, K. A. Rickert, J. M. Redwing, A. B. Ellis, F. J. Himpsel, T. F. Kuech   +5 more
openaire   +1 more source

p-GaN Activation by Electrochemical Potentiostatic Method

Electrochemical and Solid-State Letters, 2010
An electrochemical potentiostatic activation method was examined to enhance the hole concentration of p-type GaN epitaxial layer. The hole concentration was more than double, with a mobility of after an electric voltage was applied. At an optimal applied voltage of 3 V, the hole concentration was enhanced about 2.4 times from to .
Hak Hyung Lee, Gi Cheol Hong, Bong Jun Kim, Karthikeyan Giri Sadasivam, June Key Lee, Sang-Wan Ryu, Sung Jin Son, Kwang-Woo Kwon, Young-Ho Kim   +8 more
openaire   +1 more source

Sputtered Indium-Tin-Oxide on p-GaN

Journal of The Electrochemical Society, 2008
To study plasma-induced damages, we directly sputtered indium-tin-oxide (ITO) films onto p-GaN and systematically studied the effects of sputter power on the electrical properties of ITO/p-GaN. It was found that plasma bombardment during sputtering will induce nitrogen vacancies and compensate acceptor concentration in p-GaN or even convert p-GaN into ...
S. J. Chang, C. H. Lan, J. D. Hwang, Y. C. Cheng, W. J. Lin, J. C. Lin, H. Z. Chen   +6 more
openaire   +1 more source

Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

IEEE Electron Device Letters, 2019
In this letter, we investigate by means of experimental results and TCAD simulations the threshold voltage instability due to OFF-state drain stress in p-GaN gate AlGaN/GaN-on-Si HEMTs.
L. Efthymiou, K. Murukesan, G. Longobardi, F. Udrea, A. Shibib, K. Terrill   +5 more
semanticscholar   +1 more source

Electrostatic Discharge (ESD) Behavior of p-GaN HEMTs

International Symposium on Power Semiconductor Devices and IC's, 2020
This paper shows the electrostatic discharge (ESD) behavior of p-GaN HEMTs. Based on transmission line pulse (TLP) testing, the ESD characteristics (stressed: drain versus source, drain versus gate, gate versus source, drain to substrate) are ...
Yajie Xin, Wanjun Chen, Ruize Sun, Yijun Shi, Chao Liu, Yun Xia, Fangzhou Wang, Xiaorui Xu, Qi Shi, Yuan Wang, Xiaochuan Deng, Qi Zhou, Zhaoji Li, Bo Zhang   +13 more
semanticscholar   +1 more source

ICTS measurements for p-GaN Schottky contacts

Applied Surface Science, 2002
High-temperature isothermal capacitance transient spectroscopy (H-ICTS) measurements were conducted to characterize near mid-gap defects, which are the origin of the memory effect in Ni/p-GaN Schottky contacts. A large single peak was detected only under the forward bias conditions.
Kenji Shiojima, Suehiro Sugitani, Shiro Sakai   +2 more
openaire   +1 more source

Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress

IEEE Transactions on Electron Devices, 2020
The degradation behavior and its mechanisms of E-mode GaN high electron mobility transistors (HEMTs) with p-GaN gate under electrostatic discharge (ESD) stress were investigated. Reverse short-pulse stress was generated by a transmission line pulse (TLP)
Y. Chen, J. Feng, J. L. Wang, X. B. Xu, Z. He, G. Y. Li, D. Lei, Y. Chen, Y. Huang   +8 more
semanticscholar   +1 more source

p-GaN/AlGaN/GaN Enhancement-Mode HEMTs

2006 64th Device Research Conference, 2006
GaN-based enhancement-mode (E-mode) HEMTs are attracting significant interest for integration of control circuitry and for the added safety of a normally-off device in power switching applications. While previous work reports excellent performance by gate-recessing1 and Fluorine-based plasma treatment2, the Schottky gate turn-on voltage of these ...
C. S. SHU, CHINI, Alessandro, Y. FU, C. POBLENZ, J. S. SPECK, U. K. MISHRA   +5 more
openaire   +1 more source

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

IEEE Electron Device Letters, 2019
In this letter, we demonstrate a recessed-gate p-channel MISFET using a p-GaN (70 nm)/Al 0.2Ga0.8N (15 nm)/GaN heterostructure grown by metalorganic chemical vapor deposition (MOCVD) on a Si substrate.
N. Chowdhury, J. Lemettinen, Q. Xie, Yuhao Zhang, N. Rajput, P. Xiang, K. Cheng, S. Suihkonen, H. Then, T. Palacios   +9 more
semanticscholar   +1 more source

High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

, 2020
We report high performance ultraviolet (UV) photodetectors (PDs) based on p-GaN-gated AlGaN/GaN heterostructures grown on silicon substrates. Benefitting from the high electrical gain resulting from the transistor-like operation of the device, a ...
Qifeng Lyu, Huaxing Jiang, K. Lau
semanticscholar   +1 more source