Results 301 to 310 of about 21,020,521 (317)

Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs

, 2020
The low-temperature gate reliability of Schottky-type p-GaN gate AlGaN/GaN heterojunction field-effect transistors under forward gate voltage stress is investigated.
Jiabei He, Jin Wei, Yang Li, Zheyang Zheng, Song Yang, Baoling Huang, K. J. Chen   +6 more
semanticscholar   +1 more source

The effect of a surface layer capping p-InGaN/p-GaN superlattices on the contact to p-GaN

Superlattices and Microstructures, 2008
863 High Technology Research and Development of China [2004AA311020, 2006AA03Z409]; National Science Fund of China [60276029]; Science and Technology of Fujian Province [2005HZ1018, 2006H0092]
Yin, Y., Liu, B. L., Zhang, B. P., Lin, G. X.   +3 more
openaire   +2 more sources

Modeling and Analysis of Normally-OFF p-GaN Gate AlGaN/GaN HEMT as an ON-Chip Capacitor

IEEE Transactions on Electron Devices, 2020
An accurate physics-based analytical model for the gate capacitance of p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) is presented. The Poisson’s equation is formulated considering the incomplete ionization of acceptors in the p-GaN cap ...
Azwar Abdulsalam, Naveen Karumuri, Gourab Dutta   +2 more
semanticscholar   +1 more source

Carrier Transport Mechanisms Underlying the Bidirectional ${V}_{\mathrm{{TH}}}$ Shift in p-GaN Gate HEMTs Under Forward Gate Stress

IEEE Transactions on Electron Devices, 2019
The threshold voltage ( ${V} _{\text {TH}}$ ) instability of p-GaN/AlGaN/GaN HEMTs was investigated under forward gate stress. A unique bidirectional ${V} _{\text {TH}}$ shift ( $\Delta {V}_{\text {TH}}$ ) with the critical gate voltage ( ${V} _{\text {
Yuanyuan Shi, Qi Zhou, Qian Cheng, Pengcheng Wei, Liyang Zhu, Dong Wei, A. Zhang, Wanjun Chen, Bo Zhang   +8 more
semanticscholar   +1 more source

High temperature instabilities of ohmic contacts on p‐GaN

physica status solidi c, 2008
AbstractThis paper describes an investigation of the instabilities of ohmic contacts on p‐type GaN submitted to long term high temperature stress. Transfer Length Method (TLM) was used to separately analyze the contribution of contact resistivity and sheet resistance on contact degradation. Before treatment, contacts showed linear behaviour, indicating
TREVISANELLO, LORENZO ROBERTO, MENEGHINI, MATTEO, ZEHNDER U, HAHN B, MENEGHESSO, GAUDENZIO, ZANONI, ENRICO   +5 more
openaire   +2 more sources

Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs

IEEE Transactions on Electron Devices, 2016
This paper reports on the behavior of Al/Ti/p-GaN interfaces as gate contacts for p-GaN/AlGaN/GaN normally off high electron mobility transistor (HEMTs), highlighting the impact of the thermal budget on the metal gate on the device characteristics. In fact, while the devices subjected to an annealing at 800 degrees C show a considerable high leakage ...
G Greco, F Iucolano, S Di Franco, C Bongiorno, A Patti, F Roccaforte   +5 more
openaire   +2 more sources

A Schottky gate p-GaN fin-channel field effect transistor on very low doped p-GaN films

Japanese Journal of Applied Physics
Abstract In this paper, we report a trigate fin-channel field effect transistor (FET) on very low doped p-GaN films. While achieving a good source/drain ohmic contact mandates a high p-GaN doping; a good Schottky gate interface contrarily demands a low doping.
Manuel Fregolent, Simranjit Singh, Shun LU, Hirotaka Watanabe, Jia Wang, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Yoshio Honda, Hiroshi Amano, Biplab Sarkar   +11 more
openaire   +1 more source

Large Schottky barriers for Ni/p-GaN contacts

Applied Physics Letters, 1999
Large Schottky barriers were measured for Ni contacts formed on low Mg-doped p-GaN. In order to improve leaky Schottky characteristics, low-Mg doping was examined. This provided atomically flat surfaces and a low dislocation density of 5.5×108 cm−2. The Schottky barrier height (qφB) as high as 2.4±0.2 eV and n values of 1.84±0.06 were obtained from ...
Kenji Shiojima, Tomoya Sugahara, Shiro Sakai   +2 more
openaire   +1 more source

Enhanced photoresponse of n-ZnO/p-GaN heterojunction ultraviolet photodetector with high-quality CsPbBr3 films grown by pulse laser deposition

Journal of Alloys and Compounds, 2019
High-quality CsPbBr3 thin films have been fabricated by pulse laser deposition (PLD) technique and severed as an interlayer for n-ZnO/p-GaN heterojunction ultraviolet (UV) photodetector.
Yu Huang, Lichun Zhang, Jianbu Wang, Xinbo Chu, Dengying Zhang, Xiaolong Zhao, Xiaofei Li, Lianjie Xin, Yuan Zhao, Fengzhou Zhao   +9 more
semanticscholar   +1 more source

Low applied bias for p-GaN electroluminescent devices

Microelectronic Engineering, 2005
Nickel ohmic contacts and Schottky contacts using silver or titanium were fabricated on Mg-doped p-GaN films. The light emission has been obtained from these thin film electroluminescent devices (ELDs). These ELDs were operated under direct current (DC) bias.
F.K. Yam, Z. Hassan, C.K. Tan, C.W. Lim, A. Abdul Aziz   +4 more
openaire   +1 more source