Results 311 to 317 of about 21,020,521 (317)

High-performance Reverse Blocking p-GaN HEMTs with Multi-column p-GaN/Schottky Alternate-island Drain

2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022
Ruize Sun, Fangzhou Wang, Pan Luo, Wenjun Xu, Yang Wang, Chao Liu, Wanjun Chen, Bo Zhang   +7 more
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Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests

IEEE transactions on industrial electronics (1982. Print), 2021
Jiahui Sun, Jin Wei, Zheyang Zheng, K. J. Chen   +3 more
semanticscholar   +1 more source

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

IEEE Transactions on Electron Devices, 2022
Qianshu Wu, Jia Chen, Liang He, Jinwei Zhang, Qiuling Qiu, Chenliang Feng, Liuan Li, Taotao Que, Zhenxing Liu, Zhisheng Wu, Zhiyuan He, Yang Liu   +11 more
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Activating Thick Buried p-GaN for Device Applications

IEEE Transactions on Electron Devices, 2022
Yunwei Ma, Ming Xiao, Zhonghao Du, Lei Wang, Eric Carlson, Louis Guido, Han Wang, Lai Wang, Yi Luo, Yuhao Zhang   +9 more
openaire   +1 more source

Recessed p-GaN Gate MIS-HEMT with AlN Interlayer and Buried p-GaN Layer

Semiconductors
P. S. Sreelekshmi, Jobymol Jacob
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Degradation Mechanism of Pd/p-GaN Ohmic Contacts

Chinese Journal of Luminescence, 2021
Fan ZHANG, Rong-xin WANG, Si-yi HUANG, Ai-qin TIAN, Jian-ping LIU, Hui YANG   +5 more
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Dynamic phenomena in 650V p-GaN technology

A. Stockman, A. Nardo, P. Vanmeerbeek, M. Tack, D. Favero, S. Longato, C. De Santi, M. Meneghini   +7 more
openaire   +1 more source