Results 161 to 170 of about 19,412 (287)

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

Advanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

Impact of bending deformation on a capacitive power transfer system. [PDF]

Sci Rep
Peirens K, Minnaert B, Chevalier A.
europepmc   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source

Impact of Multi-Bias on the Performance of 150 nm GaN HEMT for High-Frequency Applications. [PDF]

Micromachines (Basel)
Alim MA, Gaquiere C.
europepmc   +1 more source

Metal–Insulator–Insulator–Metal (MIIM) Ag/SnO2/Al2O3/Ag Diodes Fabricated by Ultraprecise Dispensing and Atomic Layer Deposition

Advanced Electronic Materials, EarlyView.
This study introduces a new method for fabricating MIIM diodes using ultra‐precise dispensing printing techniques combined with ALD. Thus, it provides a practical alternative to traditional lithography. The fabricated diode, with a contact area of 5.4 µm × 4.0 µm exhibits a tunneling current in the microampere range, a zero‐bias responsivity of −1.31 A/
Aboubacar Savadogo, Klaus Huska, Rohit D. Chavan, Thomas Nyachoti Nyangonda, Jan Feßler, Bernard Odhiambo Aduda, Ulrich Wilhelm Paetzold, Uli Lemmer, Mohamed Hussein   +8 more
wiley   +1 more source

Capacitance Measurements for Evaluating Electrochemical Double-Layer Models and Potentials of Zero Charge: A Reassessment. [PDF]

Chemphyschem
Schalenbach M, Tempel H, Eichel RA.
europepmc   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, EarlyView.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

A Low-Noise Hybrid-Integrated Balanced Homodyne Receiver with 2.5 GHz Bandwidth and 15 dB Quantum Shot Noise Clearance. [PDF]

Micromachines (Basel)
Yang Y, Cheng C, Yang R, Ren Y, Bao S, Xue J, Lai H, Wang B.   +7 more
europepmc   +1 more source

Parasitic Capacitances on Scaling Lateral Nanowire

, 2019
Kumar, Das, Uttam, Kanti, Bhattacharyya, Tarun   +1 more
openaire   +3 more sources

High‐Speed Flexible Schottky Diodes Based on Carbon Nanotubes

Advanced Electronic Materials, EarlyView.
We demonstrate a flexible Schottky diode based on carbon nanotube network thin film, and the devices are fabricated via a low‐temperature process on a PI substrate, which exhibits excellent radio‐frequency characteristics, with a high responsivity 6 A/W at zero bias, a high intrinsic cut‐off frequency reaching 153 GHz, and an extrinsic cut‐off ...
Yan Li, Haoyu Zhang, Xinyi Zheng, Weifeng Wu, Xiaowei He, Li Ding, Sheng Wang   +6 more
wiley   +1 more source