Results 181 to 190 of about 19,412 (287)
High Voltage Flyback Converter for Safety Indicators in Electrical Testing Laboratories. [PDF]
Drăgoi AD, Lica S, Lie I, Popescu MV.
europepmc +1 more source
This study introduces a temperature‐electric field synergy strategy to enhance lithium‐ion battery performance at low temperatures. It reveals interfacial mechanisms: low temperatures cause deterioration, while room temperature aids stable interphase formation.
Zhenqiang Guo +11 more
wiley +1 more source
A 1000 fps High-Dynamic-Range Global Shutter CMOS Image Sensor with Full Thermometer Code Current-Steering Ramp. [PDF]
Han L +15 more
europepmc +1 more source
Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar +2 more
wiley +1 more source
Spectral signature of high-order photon processes enhanced by Cooper-pair pairing. [PDF]
Smith WC +9 more
europepmc +1 more source
Copper Contact for Perovskite Solar Cells: Properties, Interfaces, and Scalable Integration
Copper electrodes, as low‐cost, scalable contacts for perovskite solar cells, offer several advantages over precious metals such as Au and Ag, including performance, cost, deposition methods, and interfacial engineering. Copper (Cu) electrodes are increasingly considered practical, sustainable alternatives to noble‐metal contacts in perovskite solar ...
Shuwei Cao +4 more
wiley +1 more source
Design and Fabrication of a Low-Voltage OPAMP Based on a-IGZO Thin-Film Transistors. [PDF]
Torres-Sánchez A +4 more
europepmc +1 more source
Cadmium and Zinc‐Doped p‐type Sb2Se3 Single Crystals and Solar Cells
Cd and Zn were assessed as candidate p‐type dopants in Sb2Se3 single crystals in concentrations between 1016‐1020 cm−3. Both are effective in inducing p‐type conductivity, however Cd doped crystals exhibit lower resistivity across a wider range of dopant levels.
Thomas P. Shalvey +13 more
wiley +1 more source
Design and analysis of high-k wrapped underlap induced GaN multi-channel GAA nanosheet FET for enhanced performance with cut-off frequency in THz range. [PDF]
Singh S, Dhar RS, Banerjee A, Gupta V.
europepmc +1 more source
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source

