Results 81 to 90 of about 19,689 (303)

Non-Linear Capacitance of Si SJ MOSFETs in Resonant Zero Voltage Switching Applications

open access: yesIEEE Access, 2020
The parasitic capacitances of modern Si SJ MOSFETs are characterized by their non-linearity. At high voltages the total stored energy Eoss(VDC) in the output capacitance Coss(v) differs substantially from the energy in an equivalent linear capacitor Coss(
Manuel Escudero   +4 more
doaj   +1 more source

Single-input Multiple-output Tunable Log-domain Current-mode Universal Filter [PDF]

open access: yes, 2013
This paper describes the design of a current-mode single-input multiple-output (SIMO) universal filter based on the log-domain filtering concept.
Dejhan, K., Prommee, P.
core   +1 more source

2D Nanomaterials Toward Function‐Ready Superlubricity in Advanced Microsystems

open access: yesAdvanced Materials, EarlyView.
A unified framework links structural and transformation superlubricity with microsystem functions and deployment requirements. Mechanisms, device architectures, integration strategies, AI‐guided discovery, and benchmarking protocols are connected to define function‐ready superlubricity in advanced microsystems.
Yushan Geng, Jun Yang, Yong Yang
wiley   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

open access: yesAdvanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis   +19 more
wiley   +1 more source

Physics-Based Multi-Bias RF Large-Signal GaN HEMT Modeling and Parameter Extraction Flow

open access: yesIEEE Journal of the Electron Devices Society, 2017
In this paper, a consistent DC to RF modeling solution for Al gallium nitride (GaN)/GaN high electron mobility transistors is demonstrated that is constructed around a surface-potential-based core.
Sheikh Aamir Ahsan   +3 more
doaj   +1 more source

An Experimental and Numerical Study of the Humidity Effect on the Stability of a Capacitive Ceramic Pressure Sensor [PDF]

open access: yes, 2012
The effect of the humidity of the surrounding atmosphere on the characteristics of capacitive structures is a known problem for capacitive gas-pressure sensors.
Belavic, D., Santo Zarnik, M.
core   +1 more source

Instantaneous model of a MESFET for use in linear and nonlinear circuit simulations [PDF]

open access: yes, 1992
A formal approach for nonlinear modeling of FETs is presented. The intrinsic transistor is described by current and charge generators, that are instantaneously dependent on the two internal voltages.
Corbella Sanahuja, Ignasi   +2 more
core   +2 more sources

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

open access: yesAdvanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj   +8 more
wiley   +1 more source

Wafer‐Scale 2D High‐Entropy Transition Metal Dichalcogenide Thin‐Film Catalysts for Efficient and Durable Photoelectrochemical Hydrogen Production

open access: yesAdvanced Materials, EarlyView.
A wafer‐scale 2D high‐entropy (MoWTaNbRu)S2 thin‐film catalyst with a distorted 1T phase integrated onto p‐Si photocathode is designed for highly efficient and durable photoelectrochemical hydrogen evolution reaction. The high‐entropy effect in layered transition metal dichalcogenides optimizes hydrogen adsorption energetics, accelerates photogenerated
Sang Eon Jun   +14 more
wiley   +1 more source

Semi-analytical calculation method for parasitic capacitance of high-frequency transformers based on partitioned solution [PDF]

open access: yesAIP Advances
The parasitic capacitance of the windings significantly affects the transmission characteristics of high-frequency transformers, and its accurate calculation is crucial for the optimal design of transformers.
Yongjian Li   +5 more
doaj   +1 more source

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