Results 61 to 70 of about 19,689 (303)
Advanced Functional Materials, EarlyView.Lithium‐ion batteries (LIBs) remain central to energy storage but suffer from slow ion transport and degradation. Here, we present a binder‐free Ti3C2Tx MXene/GnR hybrid electrode with a porous 3D architecture formed via freeze casting. The structure enhances conductivity, ion transport, and stability, delivering 401 mAh/g, ∼97% efficiency, and 92 ...
Sara Mohseni Taromsari +10 more
wiley +1 more source
IEEE Access, 2019 The circuit parasitic components have a significant effect on switching performance in the high-voltage and high-frequency pulsed power converter.
Qunfang Wu +5 more
doaj +1 more source
Energies, 2022 The Gallium Nitride high electron mobility transistor (GaN HEMT) has been considered as a potential power semiconductor device for high switching speed and high power density application since its commercialization.
Dong Yan +4 more
doaj +1 more source
Correlated double sampling integrator insensitiveto parasitic capacitance
Electronics Letters, 2001 A new correlated double sampling (CDS) scheme is proposed which improves the operation of an integrator with a large parasitic capacitor at the input node of an op-amp. It suppresses the effects of the 1/f noise and offset voltage of the op-amp, as well as the kTC charge noise from the parasitic capacitor.
T. Kajita, G.C. Temes, U.-K. Moon
openaire +1 more source
Semi-empirical model of MOST and passive devices focused on narrowband RF blocks [PDF]
, 2012 This paper presents a semi-empirical modeling of MOST and passive elements to be used in narrowband radiofrequency blocks for nanometer technologies. This model is based on a small set of look-up tables (LUTs) obtained via electrical simulations.
Fiorelli, Rafaella +3 more
core
Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]
, 2008 The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Di Carlo, Stefano +3 more
core +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, EarlyView.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
A describing function for resonantly commutated H-bridge inverters [PDF]
, 2004 —The paper presents the derivation of a describing function to model the dynamic behavior of a metal oxide semiconductor field effect transistor-based, capacitively commutated H-bridge, including a comprehensive explanation of the various stages in the ...
Bingham, Chris, Sewell, H I, Stone, D A
core +1 more source
Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler
Advanced Functional Materials, EarlyView.Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun +8 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo +2 more
wiley +1 more source