Results 41 to 50 of about 159,072 (298)

Analytical modeling of capacitances for GaN HEMTs, including parasitic components

open access: yes, 2014
In this paper, a surface potential-based terminal charge and capacitance model, including parasitic components for AlGaN/GaN HEMTs is developed. First, by solving the charge control equations, the sheet charge density in the channel is modeled with a ...
Zhang, Lining   +6 more
core   +1 more source

Impact of Power Module Parasitic Capacitances on Medium Voltage SiC MOSFETs Switching Transients [PDF]

open access: yes, 2020
Increased switching speeds of wide bandgap (WBG) semiconductors result in a significant magnitude of the displacement currents through power module parasitic capacitances that are inherent in packaging design.
Jørgensen, Jannick Kjær   +6 more
core   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

open access: yesAdvanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco   +8 more
wiley   +1 more source

Effect of Parasitic Capacitances in Drum-Winding Machine [PDF]

open access: yes
Most electric machines utilize lap-type or wave-type winding. For those machines, the parasitic capacitances and bearing current phenomena are well studied.
Petrov, Ilya   +3 more
core   +1 more source

Detailed Analysis of a Regenerative Active Clamping Snubber for a Phase-Shifted Converter

open access: yesIEEE Access
The phase-shifted converter (PSFB) is one of the most used converters for applications where high power and galvanic isolation are required. To achieve zero voltage switching (ZVS) on the primary side these converters use the leakage inductance of the ...
Dorin Petreus, Toma Patarau
doaj   +1 more source

Punch-Through-Stopper Free Nanosheet FETs With Crescent Inner-Spacer and Isolated Source/Drain

open access: yesIEEE Access, 2019
Structural modifications of 5-nm node nanosheet FETs (NSFETs) were quantitatively analyzed using fully calibrated TCAD. The NSFETs with crescent inner spacer improve the short-channel effects by increasing effective gate lengths but also increase the ...
Jun-Sik Yoon   +3 more
doaj   +1 more source

Composites of Shellac and Silver Nanowires as Flexible, Biobased, and Corrosion‐Resistant Transparent Conductive Electrodes

open access: yesAdvanced Functional Materials, EarlyView.
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein   +4 more
wiley   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi   +3 more
wiley   +1 more source

Design of Differential Cylindrical Capacitive Displacement Sensor [PDF]

open access: yesJournal of Electrical and Electronics Engineering, 2020
This paper deals with the design of a differential cylindrical capacitive displacement sensor. It consists of four main conductance cylinders that form two capacitors. Their capacitances vary with controlling cylinder displacement.
ABU_AL_AISH Amir   +3 more
doaj  

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

open access: yesAdvanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon   +9 more
wiley   +1 more source

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