Results 31 to 40 of about 2,141 (267)

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

Design of Differential Cylindrical Capacitive Displacement Sensor [PDF]

Journal of Electrical and Electronics Engineering, 2020
This paper deals with the design of a differential cylindrical capacitive displacement sensor. It consists of four main conductance cylinders that form two capacitors. Their capacitances vary with controlling cylinder displacement.
ABU_AL_AISH Amir, A.SALAH Wael, H.S ALRASHDAN Mohd, ABU ZNEID Basem   +3 more
doaj  

Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors

IEEE Journal of the Electron Devices Society, 2021
Three-Independent-Gate Field-Effect Transistors (TIGFETs) are a promising alternative technology that aims to replace or complement CMOS at advanced technology nodes.
Patsy Cadareanu, Jorge Romero-Gonzalez, Pierre-Emmanuel Gaillardon   +2 more
doaj   +1 more source

Effect of Parasitic Capacitance on GMI Magnetic Sensor Performance [PDF]

Key Engineering Materials, 2013
Magnetic sensors based on GMI devices are the subject of intensive research, as they appear promising for magnetometry applications. Performances of GMI magnetometers are often limited by the noise of the electronic setup. Thus, the present challenge is to increase the GMI device sensitivity (expressed in V/T) in order to decrease the equivalent ...
Saez, Sébastien, Dufay, Basile, Dolabdjian, Christophe, Yelon, A., Menard, D.   +4 more
openaire   +3 more sources

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Chiral Phase Change Nanomaterials

Advanced Functional Materials, EarlyView.
This work demonstrates reversible, non‐volatile phase transitions in chiral Ge2${\rm Ge}_2$Sb2${\rm Sb}_2$Te5${\rm Te}_5$ (GST) nanohelices for high‐speed optical modulation of chirality and dynamic control of the state of polarization (SOP). The chiral nanostructures are fabricated using a highly directional, wafer‐scale physical vapor deposition ...
Joshua A. Burrow, Md Shah Alam, Riad Yahiaoui, Evan M. Smith, Ryan Laing, Jules Gardener, Thomas A. Searles, Piyush J. Shah, Shivashankar Vangala, Joshua R. Hendrickson, Andrew M. Sarangan, Imad Agha   +11 more
wiley   +1 more source

Novel Phase Shift Angle Compensation Method of DAB Converter Considering Parasitic Capacitance of SiC MOSFET

IEEE Access
This study proposes a novel method to compensate phase shift angle of dual active bridge (DAB) converters by considering the parasitic capacitance of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs).
Jae-Sub Ko, Cheol-Woong Choi, Woong Kul Lee, Dae-Kyong Kim   +3 more
doaj   +1 more source

Influence of the Shielding Winding on the Bearing Voltage in a Permanent Magnet Synchronous Machine

Energies, 2022
This article presents selected methods of limiting the bearing voltages of synchronous machines with permanent magnets supplied from power electronic converters.
Sebastian Berhausen, Tomasz Jarek, Petr Orság   +2 more
doaj   +1 more source

Operando Tracking of Oxygen‐Vacancy Dynamics and Negative Capacitance in Ca‐Doped BiFeO3

Advanced Functional Materials, EarlyView.
Operando electrochemical impedance spectroscopy, combined with electrocoloration, enables a direct correlation between real‐space ionic redistribution and the corresponding frequency‐domain electrical response. In lateral Ca‐doped BiFeO3 devices, time‐resolved impedance snapshots capture the evolution from bulk‐dominated mixed conduction to an ...
Jeonghun Suh, Heung‐Sik Park, Jong‐Sook Lee, Chan‐Ho Yang   +3 more
wiley   +1 more source