Results 31 to 40 of about 2,130 (264)
Punch-Through-Stopper Free Nanosheet FETs With Crescent Inner-Spacer and Isolated Source/Drain
IEEE Access, 2019 Structural modifications of 5-nm node nanosheet FETs (NSFETs) were quantitatively analyzed using fully calibrated TCAD. The NSFETs with crescent inner spacer improve the short-channel effects by increasing effective gate lengths but also increase the ...
Jun-Sik Yoon +3 more
doaj +1 more source
Parasitic capacitance cancellation in filter inductors [PDF]
2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551), 2004 This paper introduces a technique for improving the high-frequency performance of filter inductors and common-mode chokes by cancelling out the effects of parasitic capacitance. This technique uses additional passive components to inject a compensation current that cancels the parasitic current, thereby improving high-frequency filtering performance ...
Neugebauer, Timothy C. +1 more
openaire +3 more sources
Advanced Functional Materials, EarlyView.Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein +4 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Design of Differential Cylindrical Capacitive Displacement Sensor [PDF]
Journal of Electrical and Electronics Engineering, 2020 This paper deals with the design of a differential cylindrical capacitive displacement sensor. It consists of four main conductance cylinders that form two capacitors. Their capacitances vary with controlling cylinder displacement.
ABU_AL_AISH Amir +3 more
doaj
Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors
IEEE Journal of the Electron Devices Society, 2021 Three-Independent-Gate Field-Effect Transistors (TIGFETs) are a promising alternative technology that aims to replace or complement CMOS at advanced technology nodes.
Patsy Cadareanu +2 more
doaj +1 more source
Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies
Advanced Functional Materials, EarlyView.The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley +1 more source
Advanced Functional Materials, EarlyView.In the work reported herein, dipole‐engineered sulfonated carbon nanofibers enable conductive additives to actively regulate interphase formation in silicon anodes. Polar sulfonyl groups guide electrolyte decomposition to form a compact LiF‐rich interphase while promoting robust integration with silicon.
Song Kyu Kang +6 more
wiley +1 more source
IEEE AccessThis study proposes a novel method to compensate phase shift angle of dual active bridge (DAB) converters by considering the parasitic capacitance of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs).
Jae-Sub Ko +3 more
doaj +1 more source
IEEE Open Journal of Power Electronics, 2022 This paper comprehensively analyzes desaturation (desat) protection for high voltage (>3.3 kV) silicon carbide (SiC) MOSFETs and especially how to build in noise immunity under high dv/dt.
Xingxuan Huang +7 more
doaj +1 more source