Compact Modeling of Parasitic Capacitances in GAAFETs for Advanced Technology Nodes
In this work, a compact model for parasitic capacitances is proposed for Gate-All-Around silicon nanosheet FET (GAAFET). For 3 stack GAAFET, all possible parasitic capacitance components are included according to the electric field lines and geometric ...
Avirup Dasgupta +2 more
exaly +4 more sources
Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs
Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching intervals ...
Utkarsh Jadli +5 more
doaj +2 more sources
Parasitic Capacitances in Magnetic Components: Overview and Perspectives
Parasitic capacitances are important in magnetic components, especially for the high-frequency power electronic converters enabled by wide-bandgap semiconductors.
Shaokang Luan, Hongbo Zhao
doaj +2 more sources
Effects of parasitic capacitance on switching transients and thermal performance in a single-phase SiC power MOSFET inverter [PDF]
This study aims to investigate the influence of parasitic capacitances within half-bridge SiC power metal oxide semiconductor field effect transistor (MOSFET) modules, including input capacitance (Ciss), output capacitance (Coss), and reverse transfer ...
Hsien-Chie Cheng +5 more
doaj +2 more sources
Calculation Model of Parasitic Capacitance for High-Frequency Inductors and Transformers
With high power density and high-frequency power electronics technologies, parasitic capacitances of inductors and transformers have been widely discussed, in which parasitic capacitance may lead to electromagnetic interference (EMI) and efficiency ...
Qingbin Chen, Lei Yang, Yujie Lan
exaly +3 more sources
A novel modeling methodology is developed for interconnect parasitic capacitances in rule-based extraction tools. Traditional rule-based extraction tools rely on pattern matching operations to match every interconnect structure with corresponding pre ...
Mohamed Saleh Abouelyazid +2 more
doaj +2 more sources
Problems related to the correct determination of switching power losses in high-speed SiC MOSFET power modules [PDF]
High-speed switching capabilities of SiC MOSFET power modules allow building high power converters working with elevated switching frequencies offering high efficiencies and high power densities.
Dawid Zięba, Jacek Rąbkowski
doaj +1 more source
A Detailed Model of a half bridge IGBT Power Module Based on the Analytical Calculation and Measurement for EMC Study [PDF]
The parasitic parameters of an IGBT power module cause various problems, especially for electromagnetic compatibility (EMC) concerns. The high-variations in voltage and current produced by the inductances/capacitances near switches in the transient ...
J. Borsalani, A. Dastfan, J. Ghalibafan
doaj +1 more source
This paper aims to extract the correlation between parasitic capacitances of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and its influence in Electromagnetic (EM) Emission level of non-synchronous buck converter.
P. Rajeswari, V. Manikandan
doaj +1 more source
Reduction of Parasitic Capacitance of A PDMS Capacitive Force Sensor [PDF]
Polymer-based flexible micro electro mechanical systems (MEMS) tactile sensors have been widely studied for a variety of applications, such as medical and robot fields. The small size and flexibility are of great advantage in terms of accurate measurement and safety. Polydimethylsiloxane (PDMS) is often used as the flexible structural material. However,
Tatsuho Nagatomo, Norihisa Miki
openaire +3 more sources

