Results 1 to 10 of about 159,072 (298)

Effect of Parasitic Capacitance on GMI Magnetic Sensor Performance [PDF]

Key Engineering Materials, 2013
Magnetic sensors based on GMI devices are the subject of intensive research, as they appear promising for magnetometry applications. Performances of GMI magnetometers are often limited by the noise of the electronic setup. Thus, the present challenge is to increase the GMI device sensitivity (expressed in V/T) in order to decrease the equivalent ...
Saez, Sébastien, Dufay, Basile, Dolabdjian, Christophe, Yelon, A., Menard, D.   +4 more
openaire   +3 more sources

Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors

IEEE Journal of the Electron Devices Society, 2021
Three-Independent-Gate Field-Effect Transistors (TIGFETs) are a promising alternative technology that aims to replace or complement CMOS at advanced technology nodes.
Patsy Cadareanu, Jorge Romero-Gonzalez, Pierre-Emmanuel Gaillardon   +2 more
doaj   +1 more source

Novel Phase Shift Angle Compensation Method of DAB Converter Considering Parasitic Capacitance of SiC MOSFET

IEEE Access
This study proposes a novel method to compensate phase shift angle of dual active bridge (DAB) converters by considering the parasitic capacitance of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs).
Jae-Sub Ko, Cheol-Woong Choi, Woong Kul Lee, Dae-Kyong Kim   +3 more
doaj   +1 more source

Influence of the Shielding Winding on the Bearing Voltage in a Permanent Magnet Synchronous Machine

Energies, 2022
This article presents selected methods of limiting the bearing voltages of synchronous machines with permanent magnets supplied from power electronic converters.
Sebastian Berhausen, Tomasz Jarek, Petr Orság   +2 more
doaj   +1 more source

Comprehensive Analysis and Improvement Methods of Noise Immunity of Desat Protection for High Voltage SiC MOSFETs With High DV/DT

IEEE Open Journal of Power Electronics, 2022
This paper comprehensively analyzes desaturation (desat) protection for high voltage (>3.3 kV) silicon carbide (SiC) MOSFETs and especially how to build in noise immunity under high dv/dt.
Xingxuan Huang, Shiqi Ji, Cheng Nie, Dingrui Li, Min Lin, Leon M. Tolbert, Fred Wang, William Giewont   +7 more
doaj   +1 more source

Analytical Switching Model of a 1200V SiC MOSFET in a High-Frequency Series Resonant Pulsed Power Converter for Plasma Generation

IEEE Access, 2019
The circuit parasitic components have a significant effect on switching performance in the high-voltage and high-frequency pulsed power converter.
Qunfang Wu, Mengqi Wang, Weiyang Zhou, Xiaoming Wang, Guanliang Liu, Changqi You   +5 more
doaj   +1 more source

A Comprehensive Analytical Model and Performance Analysis of the LLC Resonant DCX Converter Considering Dead Time and Parasitic Effects

IEEE Open Journal of Power Electronics
The LLC resonant DCX converter is extensively used in DC-DC power conversion systems, with well-established concepts for its analysis and design. However, methodologies and analytical models for accurately determining the effects of dead-time ($t_{dt ...
Samuel S. Queiroz, Levy F. Costa
doaj   +1 more source

Implicit common-mode resonance by parasitic capacitances in LC oscillators for Ka-band satellite receiver

The Journal of Engineering, 2019
Parasitic capacitances in high frequency have a significant role in examining the inductor-capacitor tank oscillators (LC oscillators) output signal quality. Here, the authors proposed a new idea for Ka-band satellite receiver oscillator, which considers
Seyed Hossein Alavi Lavasani, Ali Medi
doaj   +1 more source

Non-Linear Capacitance of Si SJ MOSFETs in Resonant Zero Voltage Switching Applications

IEEE Access, 2020
The parasitic capacitances of modern Si SJ MOSFETs are characterized by their non-linearity. At high voltages the total stored energy Eoss(VDC) in the output capacitance Coss(v) differs substantially from the energy in an equivalent linear capacitor Coss(
Manuel Escudero, Matteo-Alessandro Kutschak, Nico Fontana, Noel Rodriguez, Diego Pedro Morales   +4 more
doaj   +1 more source

Analysis of Conducted EMI for Dual Active Bridge DC-DC Converter

Kongzhi Yu Xinxi Jishu, 2017
Electromagnetic interference phenomenon in dual active bridge (DAB) DC/DC converter which is widely used in power electronic transformer is complicated, and there has been lack of the relevant research on its internal mechanism.
LIU Hongbin, KANG Jinsong
doaj