Results 51 to 60 of about 2,141 (267)

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

Advanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis, Filip Aniés, Yiyang Yu, Mohammed Ghadiyali, Hendrik Faber, Zhanibek Bizak, Youssef Kabri, Pavlos Tzourmpakis, Suman Mandal, Linqu Luo, Temur Maksudov, Mohamad Insan Nugraha, Harold F. Mazo‐Mantilla, Patrice Vanelle, Julie Broggi, Khaled N. Salama, Udo Schwingenschlögl, Martin Heeney, Atif Shamim, Thomas D. Anthopoulos   +19 more
wiley   +1 more source

Implicit common-mode resonance by parasitic capacitances in LC oscillators for Ka-band satellite receiver

The Journal of Engineering, 2019
Parasitic capacitances in high frequency have a significant role in examining the inductor-capacitor tank oscillators (LC oscillators) output signal quality. Here, the authors proposed a new idea for Ka-band satellite receiver oscillator, which considers
Seyed Hossein Alavi Lavasani, Ali Medi
doaj   +1 more source

Non-Linear Capacitance of Si SJ MOSFETs in Resonant Zero Voltage Switching Applications

IEEE Access, 2020
The parasitic capacitances of modern Si SJ MOSFETs are characterized by their non-linearity. At high voltages the total stored energy Eoss(VDC) in the output capacitance Coss(v) differs substantially from the energy in an equivalent linear capacitor Coss(
Manuel Escudero, Matteo-Alessandro Kutschak, Nico Fontana, Noel Rodriguez, Diego Pedro Morales   +4 more
doaj   +1 more source

Optimal Control Drives Ultrafast and Energy‐Efficient Magnetization Switching in Van der Waals Magnets

Advanced Materials, EarlyView.
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh, PeiYu Cai, Elton J. G. Santos   +2 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Monolithic 3D‐Integrated All‐Solid Ion‐Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi‐Timescale Reservoir Computing

Advanced Materials, EarlyView.
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung, Hanbin Cho, Yongwoo Lee, Seunghun Baek, Hyeongjun Kim, Yun Goo Ro, Hyunhyub Ko, Joonki Suh, Yong‐Young Noh, Jimin Kwon   +9 more
wiley   +1 more source

Analysis of Conducted EMI for Dual Active Bridge DC-DC Converter

Kongzhi Yu Xinxi Jishu, 2017
Electromagnetic interference phenomenon in dual active bridge (DAB) DC/DC converter which is widely used in power electronic transformer is complicated, and there has been lack of the relevant research on its internal mechanism.
LIU Hongbin, KANG Jinsong
doaj  

Physics-Based Multi-Bias RF Large-Signal GaN HEMT Modeling and Parameter Extraction Flow

IEEE Journal of the Electron Devices Society, 2017
In this paper, a consistent DC to RF modeling solution for Al gallium nitride (GaN)/GaN high electron mobility transistors is demonstrated that is constructed around a surface-potential-based core.
Sheikh Aamir Ahsan, Sudip Ghosh, Sourabh Khandelwal, Yogesh Singh Chauhan   +3 more
doaj   +1 more source

A Wireless, Passive Multimodal Wearable Sensor With Decoupled Sensing Capabilities

Advanced Materials, EarlyView.
A wireless passive multimodal electronic skin is presented for the simultaneous perception of pressure, humidity, and odor through a frequency‐divided LC resonator array. The decoupled sensing architecture suppresses cross‐interference and enables independent signal readout under superimposed stimuli while maintaining high stability.
Wenjiang Han, Heng Xiao, Tianshuang Wang, Xiaoran Ding, Liupeng Zhao, Seokjoo Cho, Peng Sun, Inkyu Park, Geyu Lu   +8 more
wiley   +1 more source

Soft Skins With Reversible Thickness Morphing: Materials, Mechanisms, and Applications

Advanced Materials, EarlyView.
Evolution of electronic skin (e‐skin) technologies toward adaptive, multifunctional soft skins. Phase I highlights early rigid and discrete sensory interfaces. Phase II shows the transition toward flexible, stretchable, and large‐area e‐skin. Phase III captures the emergence of computational e‐skin.
Oliver Ozioko, Chiamaka Akah, Ravinder Dahiya   +2 more
wiley   +1 more source