Results 51 to 60 of about 159,072 (298)
Analysis and Modeling of Parasitic Capacitances in Advanced Nanoscale Devices [PDF]
In order to correctly perform circuit simulation, it is crucial that parasitic capacitances near devices are accurately extracted and are consistent with the SPICE models.
Bekal, Prasanna
core +2 more sources
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park +12 more
wiley +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan +4 more
wiley +1 more source
Bio‐Inspired Artificial Ionic Mechanoreceptor
A skin‐inspired artificial mechanoreceptor based on ionic interactions is presented for biomimetic tactile sensing. Pressure‐driven ionic redistribution within microfluidic channels generates a self‐powered electrical signal without external bias. The generated waveform exhibits mechanoreceptor‐like temporal features, including overshoot and undershoot,
Mohammad Akbari +4 more
wiley +1 more source
Electrode parasitic capacitances in self-aligned and deep-recessed GaAs MESFETs
We have developed an efficient algorithm for the determination of the electrode parasitic capacitances in self-aligned and deep-recessed single-gate GaAs MESFETs.
Goel, A. K.
core +1 more source
DBD tranformerless power supplies: impact of the parasitic capacitances on the power transfer [PDF]
A new transformerless power supply for DBD application is presented here. The power supply is built with 10kV SiC MOSFET. This high voltage switches allow holding the high voltage required by the DBD.
Belinger, Antoine +5 more
core +1 more source
A gas‐fed, zero‐gap, PEM CO2 electrolyzer is realized by incorporating PDDA+ ions onto the carbonaceous Co/N‐C electrocatalyst, with gaseous H2 and CO2 fed into the anode and cathode, respectively. Operating without an aqueous electrolyte, the system sustains a peak FECO of 65.1% at 100 mA cm−2. ABSTRACT Electrochemical carbon dioxide reduction (ECO2R)
Yuen Leong Chow +6 more
wiley +1 more source
Stereometric Molecular Engineering for Ultra‐Stable Aqueous Zinc‐Ion Batteries
Stereochemical configuration of molecular additives greatly influences interfacial adsorption at the Zn surface. The optimal tilted dual‐anchored adsorption geometry of myo‐inositol constructs a water‐deficient interface and regulates the solvation structure.
Cunxin Liu +4 more
wiley +1 more source
Eu‐doped {ZnCdO/ZnO} structures grown on Si are developed, showcasing dual‐functionality controlled by europium doping. While high europium concentration transforms the device into an ultrafast, self‐powered photodetector, low‐doped structures can be used as an optoelectronic synapse.
Igor Perlikowski +3 more
wiley +1 more source

