Thin film devices used as oxygen partial pressure sensors [PDF]
Electrical conductivity of zinc oxide films to be used in an oxygen partial pressure sensor is measured as a function of temperature, oxygen partial pressure, and other atmospheric constituents. Time response following partial pressure changes is studied
Canady, K. S., Wortman, J. J.
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The physicochemical conditions of the siliconizing and boron–siliconizing processes of molybdenum-based alloys in a closed reaction space in an environment of chlorine and fluorine at reduced pressure were studied.
Tetiana Loskutova +8 more
doaj +1 more source
Emissivity for CO_2 at Elevated Pressures [PDF]
Total absorptivity measurements have been carried out at room temperature as a function of partial pressure of CO_2 and of total pressure using nitrogen as pressurizing ...
Holm, R. J., Penner, S. S., Weber, D.
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Effect of CO2 Partial Pressure on the Corrosion Behavior of S135 Steel in CO2/H2S Coexistence Systems [PDF]
In order to clarify the influence and regularity of CO2 partial pressure on the corrosion behavior of S135 steel in the CO2/H2S coexistence system, the corrosion simulation test of S135 steel in CO2/H2S coexistence systems was conducted by using ...
GAO Kechao, SHANG Suogui, GAO Qiangyong, MA Jinxin, ZHANG Zhi, LIU Wanying
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Competition between hidden order and antiferromagnetism in URu_2Si_2 under uniaxial stress studied by neutron scattering [PDF]
We have performed elastic neutron scattering experiments under uniaxial stress sigma applied along the tetragonal [100], [110] and [001] directions for the heavy electron compound URu2Si2.
G. Motoyama +12 more
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Preparation and Characterization of NiO Thin Films by DC Reactive Magnetron Sputtering [PDF]
Nickel oxide (NiO) thin films were successfully deposited on Corning 7059 glass substrates at different oxygen partial pressures in the range of 1 × 10 – 4 to 9 × 10 – 4 mbar using dc reactive magnetron sputtering technique.
Y. Ashok Kumar Reddy +3 more
doaj
The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors
A metal–semiconductor–metal ultraviolet photodetector has been fabricated with a radiofrequency (RF)-sputtered InGaO thin film. Results for the devices fabricated under different oxygen partial pressure are here in discussed.
Sheng-Po Chang +2 more
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Electrode polarization at the Au, O2(g)/yttria stabilized zirconia interface. Part II: electrochemical measurements and analysis [PDF]
The impedance of the Au, O2 (g) / yttria stabilized zirconia interface has been measured as function of the overpotential, temperature and oxygen partial pressure. At large cathodic overpotentials (η < −0.1 V) and large anodic overpotentials (η > +0.1 V)
Boukamp, B.A. +2 more
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Background and Aims: Monitoring oxygen saturation (SpO2) during general anaesthesia using pulse oximetry is mandatory, though it may not always reflect the actual oxygenation status.
Mohamad F. El-Khatib +6 more
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Effects of Oxygen Partial Pressure on 4-Hydroxy-2-Nonenal Induced Oxymyoglobin Oxidation
4-hydroxyl-2-nonenal (HNE) is a lipid oxidation product that can increase oxymyoglobin oxidation. However, limited research has evaluated the role of oxygen partial pressure in HNE-induced metmyoglobin formation.
Deborah L. VanOverbeke +7 more
doaj +2 more sources

