Results 1 to 10 of about 102 (94)
A Novel Transient Fault Current Sensor Based on the PCB Rogowski Coil for Overhead Transmission Lines [PDF]
Sensors, 2016 The accurate detection of high-frequency transient fault currents in overhead transmission lines is the basis of malfunction detection and diagnosis.
Xiucheng Jiang, Yong Qian, Yadong Liu
exaly +4 more sources
Research on Small Square PCB Rogowski Coil Measuring Transient Current in the Power Electronics Devices [PDF]
Sensors, 2019 With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents.
Chaoqun Jiao, Zhibin Zhao, Yuanliang Fan
exaly +4 more sources
Interference Level Detector with PCB HDI Rogowski coil for PLC Narrow-Band Applications [PDF]
Sensors, 2023 This article presents and discusses the structure, principle of operation, and operational properties of a newly developed interference level detector (ILD) designed to measure conducted supraharmonic disturbances (1–150 kHz) in the power grid and to ...
Aleksander Lisowiec +4 more
doaj +2 more sources
Integrated Rogowski Coil Sensor for Press-Pack Insulated Gate Bipolar Transistor Chips [PDF]
Sensors, 2020 Recently, the press-pack insulated gate bipolar transistor (IGBT) has usually been used in direct current (DC) transmission. The press-pack IGBT (PPI) adopts a parallel layout of boss chips, and the currents of each chip will be uneven in the process of ...
Chaoqun Jiao +3 more
doaj +2 more sources
IET Power ElectronicsTo monitor the operating status and fault behaviour of power modules, this paper proposes a 6.5 kV/100 A silicon carbide (SiC) MOSFET power module capable of monitoring the drain currents of parallel‐connected chips.
Yihao Zhang +8 more
doaj +2 more sources
IET Power ElectronicsThe high‐power press‐pack insulate gate bipolar transistor (IGBT) is the core device of a high‐voltage converter. The current sharing and aging characteristics of many parallel chips in IGBT are critical issues regarding its operational reliability.
Litong Wang +5 more
doaj +2 more sources
PCB-Embedded Spiral Pattern Pick-Up Coil Current Sensor for WBG Devices
Energies, 2020 This paper proposes a current sensor for wide bandgap (WBG) devices. The current of a power semiconductor device is mainly measured using a Rogowski coil, an active current transformer, and a coaxial shunt resistor.
Hwa-Rang Cha +3 more
doaj +1 more source
Power Module Design for GaN Transistors Enabling High Switching Speed in Multi‐Kilowatt Applications
Energy Technology, Volume 11, Issue 12, December 2023., 2023 A novel power module design comprising a 650 V, 300 A half‐bridge with integrated direct current (DC)‐link and gate drivers is presented. It has an exceptionally low power loop stray inductance of 1 nH. Simulations show a maximum dv/dt of 232 V ns−1 without parasitic turn‐on. The drain–source voltage overshoot amounts to only 19% of the DC‐link voltage.
Dennis Wöhrle +2 more
wiley +1 more source
IET Power Electronics, Volume 16, Issue 12, Page 2103-2120, 16 September 2023., 2023 Compared to Si‐IGBTs, SiC MOSFETs bring higher efficiency, higher power density, and smaller size and mass to electrified vehicle application without increasing system cost. Stronger electromagnetic interference, reliability issues, potential motor insulation failure, and heat dissipation issues are the main technical challenges.
Bufan Shi +6 more
wiley +1 more source
A novel inductively coupled RLC damping scheme for eliminating switching oscillations of SiC MOSFET
IET Power Electronics, Volume 16, Issue 9, Page 1486-1498, 24 July 2023., 2023 A novel inductively coupled RLC damping is proposed to eliminate switching oscillations of SiC MOSFET. The proposed scheme is less insensitive to parasitics enabling selection of snubber resistors with higher power ratings. It also avoids unusual temperature rise resulted by snubber losses in the power loop.
JiaWen Li +4 more
wiley +1 more source