Results 11 to 20 of about 704 (170)

A 6.5 kV/100A Low‐Inductance SiC MOSFET Power Module With Integrated Current Monitoring for Parallel Chips

open access: yesIET Power Electronics
To monitor the operating status and fault behaviour of power modules, this paper proposes a 6.5 kV/100 A silicon carbide (SiC) MOSFET power module capable of monitoring the drain currents of parallel‐connected chips.
Yihao Zhang   +8 more
doaj   +2 more sources

A Universal PCB Rogowski Coils Turns Arrangement Method for Anti‐Interference From Adjacent Conductors in Press‐Pack IGBT

open access: yesIET Power Electronics
The high‐power press‐pack insulate gate bipolar transistor (IGBT) is the core device of a high‐voltage converter. The current sharing and aging characteristics of many parallel chips in IGBT are critical issues regarding its operational reliability.
Litong Wang   +5 more
doaj   +2 more sources

Design of Open-Ended Structure Wideband PCB Rogowski Coil Based on New Winding Method [PDF]

open access: yesElectronics, 2022
Compared with the traditional Rogowski coil, printed circuit board (PCB) Rogowski coil has the advantages of high measurement accuracy, simple manufacturing process and low cost. It has become an important device in current measurement. However, the existing PCB Rogowski coils are mostly closed, and the open-ended structure PCB Rogowski coils are ...
Qinghua Tan   +5 more
openaire   +3 more sources

PCB Rogowski Coils for Capacitors Current Measurement in System Stability Enhancement

open access: yesElectronics, 2023
In terms of high-current measurement of capacitors, PCB Rogowski coils have attracted much attention because of their small size and easy installation. However, they are vulnerable to electromagnetic interference. In order to improve the immunity of the coil, this paper studies the influence of the structure and parameter changes of the double-layer ...
Yue, Xuxin   +4 more
openaire   +3 more sources

On performance evaluation of high-power, high-bandwidth current measurement technologies for SiC switching devices [PDF]

open access: yesIET Power Electronics, Volume 17, Issue 7, Page 834-854, 20 May 2024.
Silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) switch at an unprecedented speed, even at high currents. For accurate dynamic characterization, current sensors must measure high currents at a high bandwidth ...
Peftitsis, Dimosthenis   +1 more
core   +2 more sources

Power Module Design for GaN Transistors Enabling High Switching Speed in Multi‐Kilowatt Applications

open access: yesEnergy Technology, Volume 11, Issue 12, December 2023., 2023
A novel power module design comprising a 650 V, 300 A half‐bridge with integrated direct current (DC)‐link and gate drivers is presented. It has an exceptionally low power loop stray inductance of 1 nH. Simulations show a maximum dv/dt of 232 V ns−1 without parasitic turn‐on. The drain–source voltage overshoot amounts to only 19% of the DC‐link voltage.
Dennis Wöhrle   +2 more
wiley   +1 more source

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

open access: yesIET Power Electronics, Volume 16, Issue 12, Page 2103-2120, 16 September 2023., 2023
Compared to Si‐IGBTs, SiC MOSFETs bring higher efficiency, higher power density, and smaller size and mass to electrified vehicle application without increasing system cost. Stronger electromagnetic interference, reliability issues, potential motor insulation failure, and heat dissipation issues are the main technical challenges.
Bufan Shi   +6 more
wiley   +1 more source

A novel inductively coupled RLC damping scheme for eliminating switching oscillations of SiC MOSFET

open access: yesIET Power Electronics, Volume 16, Issue 9, Page 1486-1498, 24 July 2023., 2023
A novel inductively coupled RLC damping is proposed to eliminate switching oscillations of SiC MOSFET. The proposed scheme is less insensitive to parasitics enabling selection of snubber resistors with higher power ratings. It also avoids unusual temperature rise resulted by snubber losses in the power loop.
JiaWen Li   +4 more
wiley   +1 more source

Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes

open access: yesIET Power Electronics, Volume 16, Issue 4, Page 683-698, 18 March 2023., 2023
Abstract Press‐pack insulated gate bipolar transistor modules (PP‐IGBTs) have been widely used in high‐voltage and high‐power‐density applications, such as high‐voltage direct‐current (HVDC) converters, because of their advantages of low thermal resistance, double side cooling, and short‐circuit failure mode.
Renkuan Liu   +5 more
wiley   +1 more source

Designing and manufacturing of electric arc furnace currents measurement system in Mobarakeh Steel Company by printed circuit board‐type Rogowski coils

open access: yesIET Science, Measurement &Technology, Volume 16, Issue 6, Page 353-366, August 2022., 2022
Abstract This paper deals with the utilization of printed circuit board Rogowski coils (PCBRCs) for differential protection of electric arc furnace (EAF) transformers in Mobarakeh Steel Company (MSC), Isfahan, Iran. Because of a high level of current (in the range of 100 kA) in the EAF transformers in the MSC, employment of differential protection is ...
Reza Sadeghi   +3 more
wiley   +1 more source

Home - About - Disclaimer - Privacy