Results 11 to 20 of about 697 (183)
IET Power ElectronicsTo monitor the operating status and fault behaviour of power modules, this paper proposes a 6.5 kV/100 A silicon carbide (SiC) MOSFET power module capable of monitoring the drain currents of parallel‐connected chips.
Yihao Zhang +8 more
doaj +2 more sources
IET Power ElectronicsThe high‐power press‐pack insulate gate bipolar transistor (IGBT) is the core device of a high‐voltage converter. The current sharing and aging characteristics of many parallel chips in IGBT are critical issues regarding its operational reliability.
Litong Wang +5 more
doaj +2 more sources
Single PCB sensor-based output current reproduction for three-phase inverter systems [PDF]
Power Electronic Devices and Components, 2023 This study proposes a practical output current measurement system in a three-phase inverter with a single printed circuit board (PCB) Rogowski coil sensor inserted in the bus between the DC-link capacitor and the power semiconductor module.
B. Bayarkhuu +3 more
doaj +3 more sources
On performance evaluation of high-power, high-bandwidth current measurement technologies for SiC switching devices [PDF]
IET Power Electronics, Volume 17, Issue 7, Page 834-854, 20 May 2024.Silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) switch at an unprecedented speed, even at high currents. For accurate dynamic characterization, current sensors must measure high currents at a high bandwidth ...
Peftitsis, Dimosthenis +1 more
core +2 more sources
Power Module Design for GaN Transistors Enabling High Switching Speed in Multi‐Kilowatt Applications
Energy Technology, Volume 11, Issue 12, December 2023., 2023 A novel power module design comprising a 650 V, 300 A half‐bridge with integrated direct current (DC)‐link and gate drivers is presented. It has an exceptionally low power loop stray inductance of 1 nH. Simulations show a maximum dv/dt of 232 V ns−1 without parasitic turn‐on. The drain–source voltage overshoot amounts to only 19% of the DC‐link voltage.
Dennis Wöhrle +2 more
wiley +1 more source
IET Power Electronics, Volume 16, Issue 12, Page 2103-2120, 16 September 2023., 2023 Compared to Si‐IGBTs, SiC MOSFETs bring higher efficiency, higher power density, and smaller size and mass to electrified vehicle application without increasing system cost. Stronger electromagnetic interference, reliability issues, potential motor insulation failure, and heat dissipation issues are the main technical challenges.
Bufan Shi +6 more
wiley +1 more source
A novel inductively coupled RLC damping scheme for eliminating switching oscillations of SiC MOSFET
IET Power Electronics, Volume 16, Issue 9, Page 1486-1498, 24 July 2023., 2023 A novel inductively coupled RLC damping is proposed to eliminate switching oscillations of SiC MOSFET. The proposed scheme is less insensitive to parasitics enabling selection of snubber resistors with higher power ratings. It also avoids unusual temperature rise resulted by snubber losses in the power loop.
JiaWen Li +4 more
wiley +1 more source
IET Power Electronics, Volume 16, Issue 4, Page 683-698, 18 March 2023., 2023 Abstract Press‐pack insulated gate bipolar transistor modules (PP‐IGBTs) have been widely used in high‐voltage and high‐power‐density applications, such as high‐voltage direct‐current (HVDC) converters, because of their advantages of low thermal resistance, double side cooling, and short‐circuit failure mode.
Renkuan Liu +5 more
wiley +1 more source
IET Science, Measurement &Technology, Volume 16, Issue 6, Page 353-366, August 2022., 2022 Abstract This paper deals with the utilization of printed circuit board Rogowski coils (PCBRCs) for differential protection of electric arc furnace (EAF) transformers in Mobarakeh Steel Company (MSC), Isfahan, Iran. Because of a high level of current (in the range of 100 kA) in the EAF transformers in the MSC, employment of differential protection is ...
Reza Sadeghi +3 more
wiley +1 more source
IET Power Electronics, Volume 15, Issue 6, Page 476-486, 6 May 2022., 2022 Abstract The safe and reliable operation of power converter requires a protection circuit with fast response when the power device is subjected to the short‐circuit (SC) fault. In addition, the on‐line condition monitoring circuit is beneficial to provide a suggestion for the replacement of aged device.
Shan Yin +4 more
wiley +1 more source