Results 61 to 70 of about 110,283 (332)

Synchrotron Radiation for Quantum Technology

open access: yesAdvanced Functional Materials, EarlyView.
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader   +10 more
wiley   +1 more source

Perpendicularly magnetized ferrimagnetic [Mn50Ga50/Co2FeAl] superlattice and the utilization in magnetic tunnel junctions

open access: yesAIP Advances, 2015
The ferrimagnetic superlattice (SL) [MnGa/Co2FeAl]n exhibiting perpendicular magnetic anisotropy opened a new method for spintronics materials used in magnetic random access memory, because of the high anisotropy, small damping constant and tunable ...
Q. L. Ma   +3 more
doaj   +1 more source

Strain tunability of perpendicular magnetic anisotropy in van der Waals ferromagnets VI3 [PDF]

open access: green, 2022
Xi Zhang   +9 more
openalex   +1 more source

Fractional Skyrmion Tubes in Chiral‐Interfaced 3D Magnetic Nanowires

open access: yesAdvanced Functional Materials, EarlyView.
In chiral 3D helical magnetic nanowires, the coupling between the geometric and magnetic chirality provides a way to create topological spin states like vortex tubes. Here, it is demonstrated how the breaking of this coupling in interfaced 3D nanowires of opposite chirality leads to even more complex topological spin states, such as fractional ...
John Fullerton   +11 more
wiley   +1 more source

Nd3-xBixFe4GaO12 (x = 2, 2.5) films on glass substrates prepared by MOD method

open access: yesEPJ Web of Conferences, 2014
We studied Nd3-XBiXFe4GaO12 films to obtain perpendicular magnetic anisotropy as well as large Faraday effect. NdBi2Fe4GaO12 (Bi2:NIGG) and Nd0.5Bi2.5Fe4GaO12 (Bi2.5:NIGG) films were obtained on Nd2BiFe4GaO12 (Bi1:NIGG) layer prepared on glass substrates
Yoshida T.   +3 more
doaj   +1 more source

Magnetic anisotropy by Rashba spin-orbit coupling in antiferromagnetic thin films

open access: yes, 2018
Magnetic anisotropy in an antiferromagnet (AFM) with inversion symmetry breaking (ISB) is investigated. The magnetic anisotropy energy (MAE) resulting from the Rashba spin-orbit and s-d type exchange interactions is determined for two different models of
Barnes, Stewart E.   +2 more
core   +1 more source

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

open access: yesAdvanced Functional Materials, EarlyView.
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang   +8 more
wiley   +1 more source

2D Multifunctional Spin‐Orbit Coupled Dirac Nodal Line Materials

open access: yesAdvanced Functional Materials, EarlyView.
A total of 473 nonmagnetic and antiferromagnetic 2D spin‐orbit coupled Dirac nodal line materials are screened, spanning 5 layer groups and 12 magnetic space groups. Furthermore, it integrates their topological properties with electride, multiferroic, and magnetic characteristics, revealing unique systems with expanded functionalities and promising ...
Weizhen Meng   +7 more
wiley   +1 more source

Angular dependence of magnetoresistivity in c-oriented MgB2 thin film

open access: yes, 2002
The anisotropy of MgB2 is still under debate: its value, strongly dependent on the sample and on the measuring method, ranges between 1.2 and 13. In this work we present our results on a MgB2 c-oriented superconducting thin film.
Braccini, V.   +7 more
core   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

open access: yesAdvanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp   +7 more
wiley   +1 more source

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