Results 51 to 60 of about 25,904 (258)
Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials [PDF]
Phase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale. Although the interconversion appears to involve a change in local atomic coordination numbers, the electronic basis for this process is still unclear.
Shakhvorostov, D. +14 more
openaire +3 more sources
Sulfur‐doped graphitized carbon nanofibers act as adaptive catalyst–support platforms, enabling dynamic sulfur‐mediated reconstruction and strong metal–support interactions. This unique behavior enhances catalyst stability and controls reaction pathways, achieving highly selective urea oxidation (∼92% N2) coupled with efficient hydrogen evolution ...
Melanie Guillén‐Soler +4 more
wiley +1 more source
In-situ characterization of the semiconductor-metal phase transition in vanadium dioxide thin films [PDF]
Vanadium dioxide (VO2) exhibits a reversible first-order semiconductor-metal phase transition (SMT) near 68 °C at ambient pressure, consisting in a structural transformation from a low-temperature semiconducting monoclinic phase to a high-temperature ...
Delbono Ilaria +4 more
doaj +1 more source
High-pressure induced Weyl semimetal phase in 2D Tellurium
Relativistic Weyl fermion quasiparticles in Weyl semimetal bring the electron’s chirality degree of freedom into the electrical transport and give rise to exotic phenomena.
Chang Niu +7 more
doaj +1 more source
Room‐Temperature Synthesis of Strongly Confined Lead Halide Perovskite Quantum Dots
CsPbX3${\rm CsPbX}_3$ lead halide perovskite quantum dots (QDs) are synthesized in a room‐temperature, five‐minute synthesis, yielding size‐controlled QDs with bright, tunable emission governed by reaction conditions and halide composition. A strongly binding ligand, OD‐PEA, ensures months‐long stability under ambient conditions and facilitates their ...
Anna Abfalterer +13 more
wiley +1 more source
This paper proposes a highly efficient ferroelectric artificial synapse device based on an oxide semiconductor and SnCl2‐inserted P(VDF‐TrFE) gate dielectric layer. This FeFET significantly improved the synaptic performance due to the ion‐dipole interaction.
Hyun‐Soo Kim +14 more
wiley +1 more source
In recent years, much interest in the study of Van der Waals heterostructures (vdWhs) has arisen. This has led to a significant amount of fundamental research being produced, from which novel optoelectronic applications have been established.
Gang Xu, Yelu He
doaj +1 more source
Correlated Metal LaNiO3 as a p‐Type Transparent Conductor
p‐type transparent conducting oxides are needed to enable superstrate solar cell geometries with n‐type absorbers. The p‐type correlated metal LaNiO3 combines high optical transmission with low electrical resistivity and is compatible with a range of scalable deposition processes.
Shivang Beniwal +8 more
wiley +1 more source
This paper reports the experimentally measured thermal and electrical conductivities from which the Lorenz numbers as functions of temperature were derived for the solids and melts of elemental Te and samples of Hg1−xCdxTe of x = 0, 0.1, and 0.2.
Ching-Hua Su
doaj +1 more source
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source

