Results 151 to 160 of about 258,084 (292)
Wafer‐Scale Single‐Crystal Boron Nitride: Synthesis and Integration in 2D Electronics
This Review highlights recent breakthroughs in wafer‐scale hBN synthesis and its integration into next‐generation 2D electronics. We analyze growth kinetics, epitaxial strategies, and stacking‐sequence control while correlating material quality with device performance.
Jaewon Wang, Soon‐Yong Kwon
wiley +1 more source
A two-mode thermomechanically squeezed phonon laser. [PDF]
Zhang K +3 more
europepmc +1 more source
In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk +8 more
wiley +1 more source
Carrier mobilities and electron-phonon interactions beyond DFT. [PDF]
Poliukhin A +4 more
europepmc +1 more source
A nanostructured, naturally flame‐retardant, and non‐toxic inorganic composite is introduced, which is laterally associated with silica nanoparticles to induce the restacking of the LDH lamella structure, thereby serving as an efficient thermal insulator.
Gayani Pathiraja +7 more
wiley +1 more source
Anharmonic effects on the dynamical stability of Ce-Co-Cu intermetallic ternary compounds. [PDF]
Tee WS, Xia W, Flint R, Wang CZ.
europepmc +1 more source
Direct Mode‐Resolved Measurement of Interfacial Phonon Transport by Acoustic Phonon Reflectometry
We introduce a novel analysis, acoustic phonon reflectometry, that measures the mode‐resolved phonon reflection coefficient at semiconductor interfaces. In aluminum nitride, we observe excellent agreement with the acoustic mismatch model across three distinct interfaces.
Christopher Hennighausen +9 more
wiley +1 more source
Time-resolved tracking of hot carrier relaxation in two types of MBenes. [PDF]
Zhao J +9 more
europepmc +1 more source
Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales +10 more
wiley +1 more source
Advances in Iron-Based Superconductors and Transformational Insights into Electron-Differential Phonon Coupling. [PDF]
Liu WK, Li KC, Zhang Y, Wong CH.
europepmc +1 more source

