Results 151 to 160 of about 258,084 (292)

Wafer‐Scale Single‐Crystal Boron Nitride: Synthesis and Integration in 2D Electronics

open access: yesAdvanced Materials Interfaces, EarlyView.
This Review highlights recent breakthroughs in wafer‐scale hBN synthesis and its integration into next‐generation 2D electronics. We analyze growth kinetics, epitaxial strategies, and stacking‐sequence control while correlating material quality with device performance.
Jaewon Wang, Soon‐Yong Kwon
wiley   +1 more source

A two-mode thermomechanically squeezed phonon laser. [PDF]

open access: yesNat Commun
Zhang K   +3 more
europepmc   +1 more source

Enhancing Stability of Few‐Layer Black Phosphorus (FLBP) Through Nitrocellulose Coating: A Robust Defense Mechanism Against Degradation

open access: yesAdvanced Materials Interfaces, EarlyView.
In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk   +8 more
wiley   +1 more source

Carrier mobilities and electron-phonon interactions beyond DFT. [PDF]

open access: yesNPJ Comput Mater
Poliukhin A   +4 more
europepmc   +1 more source

Strong Lateral Confinement of Hydrophilic Silica Nanoparticles on Mg‐Al Layered Double Hydroxides Nanoflakes for Enhanced Thermal Properties

open access: yesAdvanced Materials Interfaces, EarlyView.
A nanostructured, naturally flame‐retardant, and non‐toxic inorganic composite is introduced, which is laterally associated with silica nanoparticles to induce the restacking of the LDH lamella structure, thereby serving as an efficient thermal insulator.
Gayani Pathiraja   +7 more
wiley   +1 more source

Direct Mode‐Resolved Measurement of Interfacial Phonon Transport by Acoustic Phonon Reflectometry

open access: yesAdvanced Materials Interfaces, EarlyView.
We introduce a novel analysis, acoustic phonon reflectometry, that measures the mode‐resolved phonon reflection coefficient at semiconductor interfaces. In aluminum nitride, we observe excellent agreement with the acoustic mismatch model across three distinct interfaces.
Christopher Hennighausen   +9 more
wiley   +1 more source

Time-resolved tracking of hot carrier relaxation in two types of MBenes. [PDF]

open access: yesChem Sci
Zhao J   +9 more
europepmc   +1 more source

Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation

open access: yesAdvanced Materials Interfaces, EarlyView.
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales   +10 more
wiley   +1 more source

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