Results 141 to 150 of about 124,796 (262)
Laser‐Induced Local De‐Doping in Organic Semiconductors
Advanced Materials Technologies, EarlyView.The polymer PBTTT‐C14 doped with the small molecule acceptor F4TCNQ is considered as a benchmark material system. Mask‐free, microscale patterning of the doping level via laser‐induced heating and sublimation of dopant molecules is shown. Controlling laser irradiance and swath spacing allows dopant level control with laser‐limited resolution, opening ...
Christian Rainer +5 more
wiley +1 more source
Photoluminescence study on Eu-implanted GaN
, 2005 The photoluminescence (PL) properties of Eu-implanted GaN thin films are studied. The experimental results show that the PL intensity is seriously affected by ion implantation conditions.
Chen WD +3 more
core
Wafer‐Scale Top‐Down Patterning of Metal Halide Perovskites
Advanced Materials Technologies, EarlyView.Wafer‐scale patterning of metal halide perovskite films is demonstrated on 150 mm substrates using a chemically amplified resist, polymethyl methacrylate (CAR‐PMMA) and a single reactive ion etching step. The streamlined process preserves film luminescence while defining submicrometer features across the full wafer, enabling dense, scalable integration
Federico Fabrizi +7 more
wiley +1 more source
Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film
, 2000 A novel electroluminescence oxide phosphor (Gd2O3-Ga2O3):Ce has been prepared by electron beam evaporation. The emission peaks of photoluminescence lie at 390nm and a shoulder at 440nm.
Xu XR +5 more
core
Advanced Materials Technologies, EarlyView.This work demonstrates that achieving conductive undoped SnOx contacts required careful tailoring of oxygen vacancy (VO) tuning and defect engineering. Controlling oxygen deposition pressure and low‐temperature annealing (300°C) optimizes defect stoichiometry and mitigates carrier scattering. This low thermal budget approach significantly enhances Hall
Paul Llontop +13 more
wiley +1 more source
Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering
, 2001 Amorphous Sic films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200 degreesC for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous Sic is determined by
Yang H +8 more
core
Dynamic Fluorescence Modulation via Light‐Driven Competitive Protonation
Advanced Optical Materials, EarlyView.A two‐component molecular system demonstrates reversible, light‐driven fluorescence write–erase cycling and thermal imaging. Illumination of a merocyanine photoacid transfers a proton to a highly efficient fluorescent pyridinium dye, switching its emission color; thermal relaxation reverses the process in the dark.
Serena X. Liu +10 more
wiley +1 more source
Near infrared photoluminescence from Yb,Al Co-implanted SiO2 films on silicon
, 2006 Intense room-temperature near infrared (NIR) photoluminescence (980 nm and 1032 nm) is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the F-2(5/2) and F-2(7/2) levels of Yb3+ in SiO2.
Wang QM (Wang Qi-Ming) +5 more
core
Transparent Single‐Dye NIR Photonic Platform for Multimodal Optical Authentication
Advanced Optical Materials, EarlyView.A single‐component DHP‐SQ dye integrates visible transparency, near‐infrared (NIR) fluorescence, and photothermal functionality into one molecular platform. NIR‐selective visualization transforms visually imperceptible printed patterns into readily authenticated information, while screen‐printing compatibility enables well‐defined patterning on diverse
Su Jeong Choi +14 more
wiley +1 more source