Results 121 to 130 of about 156,775 (308)
Photoluminescence of ZnO : Tb nanoparticles
, 2000 Terbium-doped zinc oxide nanoparticles have been prepared by hydrolyzing zinc acetate and terbium acetate. Nanoparticle-matrix-facilitated photoluminescence which is related to Tb3+ ions has been observed for ZnO:Tb nanoparticles.
Guo HQ +5 more
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Advanced Materials, EarlyView.ABSTRACT Accurately knowing the frontier orbital energies of the structurally disordered small‐molecule organic semiconductors that are used in optoelectronic devices such as organic light‐emitting diodes is required to rationally improve their performance. Here, we show that these energies can be deduced with a large accuracy from the peak energies of
Christian B. McDonald +7 more
wiley +1 more source
Anti-Stokes photoluminescence in ZnO microcrystal
, 2006 Low temperature (10 K) strong anti-Stokes photoluminescence (ASPL) of ZnO microcrystal excited by low power cw 532 nm laser is reported here. Energy upconversion of 1.1 eV is obtained in our experiment with no conventional nonlinear effect.
Du WM (Du Weimin) +4 more
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Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities
Advanced Materials, EarlyView.This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen +7 more
wiley +1 more source
Advanced Materials, EarlyView.A scalable bottom‐up CVD methodology, based on liquid transition metal salt precursors, is presented for the controlled growth of two high‐quality MoSe2–WSe2 heterostructures (HSs): purely lateral (HS I) and hybrid lateral/vertical (HS II), by simply adjusting precursor concentration.
Md Tarik Hossain +16 more
wiley +1 more source
Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors
Advanced Materials, EarlyView.Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee +15 more
wiley +1 more source
Advanced Materials, EarlyView.Assembly freedom engineering breaks the vertical alignment constraint of donor–acceptor self‐assembled monolayers, tuning their assembly freedom to achieve quasi‐random molecular orientation. This strategy simultaneously boosts interfacial charge transport and mechanical robustness, enabling high‐efficiency and mechanically stable flexible perovskite ...
Biao Zhou +9 more
wiley +1 more source
Advanced Materials, EarlyView.Specific ortho‐halogenation transforms crystalline TADF emitters into efficient organic scintillators. Fluorine reduces the effective singlet–triplet separation, while chlorine combines near‐degenerate excited states with vibrational modulation of spin–orbit coupling.
Illia E. Serdiuk +8 more
wiley +1 more source
, 2014 Citation: 'photoluminescent polymer' in the IUPAC Compendium of Chemical Terminology, 3rd ed.; International Union of Pure and Applied Chemistry; 2006. Online version 3.0.1, 2019. 10.1351/goldbook.PT07181 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms.
openaire +1 more source
, 2005 InAs quantum wires (QWRs) have been fabricated on the InP(001), which has been evidenced by TEM and polarized photoluminescence measurements (PPL).
Wang YL +8 more
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