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Il Nuovo Cimento B Series 11, 1974
The photoluminescence of a large number of pure and doped single crystals of GaSe has been investigated in the temperature range from 4.2 to 300 °K with excitation intensities varying between 4·10−5 and 3·102 kW cm−2. The excitation was produced by the green line of a frequency doubled Nd: YAG laser.
J. P. Voitchovsky, A. Mercier
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The photoluminescence of a large number of pure and doped single crystals of GaSe has been investigated in the temperature range from 4.2 to 300 °K with excitation intensities varying between 4·10−5 and 3·102 kW cm−2. The excitation was produced by the green line of a frequency doubled Nd: YAG laser.
J. P. Voitchovsky, A. Mercier
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Reciprocal-space analysis of photoluminescence and photoluminescence excitation spectra
Applied Physics Letters, 1996We show that energy positions of features in photoluminescence and photoluminescence excitation (PLE) spectra can be obtained more accurately by Fourier transforming segments of these spectra and analyzing the resulting coefficients in reciprocal space than by using conventional real-space analysis.
S. D. Yoo +3 more
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Photoluminescence of SrS:Cu phosphors
Solid State Communications, 1978Abstract Results of the investigation on the spectral characteristics of PL of SrS:Cu phosphors are presented. Probable emitters for the three observed bands, viz. 4710 A, 5200 A and 5480 A, have been suggested.
B.B. Laud, V.W. Kulkarni
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Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si
Solid State Communications, 1986ABSTRACTThe photoluminescence of GaAs/Si grown by OMCVD has been analyzed as a function of temperature and the dominant high temperature line identified as a conduction-band-to-valence-band transition. Photoluminescence excitation spectra indicate that the transition is excitonic at 4.2 K.
S. Zemon +4 more
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Solid-State Electronics, 1978
Abstract The photoluminescence spectra of CuGaSe2 have been investigated at 76 K in the range 0.65 3 4 m grating monochromator. The luminescence observed consisted of a rather sharp structure near the energy gap, plus two broad peaks at considerably smaller energies.
M.P. Vecchi, J. Ramos, W. Giriat
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Abstract The photoluminescence spectra of CuGaSe2 have been investigated at 76 K in the range 0.65 3 4 m grating monochromator. The luminescence observed consisted of a rather sharp structure near the energy gap, plus two broad peaks at considerably smaller energies.
M.P. Vecchi, J. Ramos, W. Giriat
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Photoluminescence immunoassays
1997Abstract In biospecific assay technologies the detection of a label is most often based on measurement of emitted light. The emission can originate, for example, from radiation (radioimmunoassays, radioluminescence, RIA, IRMA), from a fluorescent compound (fluoroimmunoassays, FIA, IFMA), or the fluorescent end-product of an enzymatic ...
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Photoluminescence: Science and Applications
2007In the past five years photoluminescence (PL) of SWNTs has gone from discoveryto one of the most actively researched areas, with broad impact on the basic scienceof SWNTs, as well as the promise of applications. The simplest free-carrier models ofperfect semiconducting SWNTs in vacuum predict that they have direct bandgapsand therefore should be ...
Finnie, Paul, Lefebvre, J., Maruyama, S.
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Fourier Transform Infrared Photoluminescence
SPIE Proceedings, 1988A commercial Fourier transform spectrometer has been modified to measure recombinant radiation (photoluminescence) under argon laser excitation from semiconducting and insu-lating solid samples at low temperatures. The experimental method is described detailing the criteria for optimizing the instrumentation and the limitations of the technique.
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