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Nitrogen vacancies in graphitic carbon nitride and their role in heterogeneous photocatalysis.
Landi A +7 more
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Integrated on-chip quantum light sources on a van der Waals platform
Munkhbat B +6 more
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On photoluminescence in HgGa2S4
Journal of Luminescence, 2005Abstract In this paper, we investigate the kinetics of photoluminescence in excited crystals of HgGa2S4 which have recently been proposed for implementing tunable luminescent devices. From photoluminescence experiments, performed at various temperatures and excitation powers, it appears that two kinds of radiative recombination processes take place ...
RICCI, PIER CARLO +2 more
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Photoluminescence and photoluminescence excitation study of CuGaTe2
Journal of Applied Physics, 1998Photoluminescence (PL) and photoluminescence excitation measurements over a temperature range 12 K<T<300 K on high quality CuGaTe2 crystals grown by the vertical Bridgman method were completed. The whole PL spectrum consists of two regions.
J. Krustok +7 more
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Photoluminescence and photoluminescence excitation spectroscopy of Al0.48In0.52As
Journal of Applied Physics, 1993A detailed study of the photoluminescence (PL) and photoluminescence excitation (PLE) properties of Al0.48In0.52As is presented. A PL linewidth of 13 meV and a Stokes shift of only 9 meV at 4.2 K both indicate that the effect of clustering is minimal in our samples. The Stokes shift is three times lower than the lowest reported in the literature.
S. M. Olsthoorn +3 more
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The photoluminescence of SrS:Cu nanophosphor
Nanotechnology, 2008Strontium sulfide doped with copper has been regarded as one of the most promising inorganic materials for the blue-green color phosphor. A wet chemical precipitation method with post-annealing is presented for the synthesis of copper-doped SrS nanoparticles. XRD studies revealed the phase purity of SrS particles with rocksalt structure.
E I, Anila, Arun, Aravind, M K, Jayaraj
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Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si
Solid State Communications, 1986ABSTRACTThe photoluminescence of GaAs/Si grown by OMCVD has been analyzed as a function of temperature and the dominant high temperature line identified as a conduction-band-to-valence-band transition. Photoluminescence excitation spectra indicate that the transition is excitonic at 4.2 K.
S. Zemon +4 more
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