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Low-Temperature Formation and Photophysics of Phloroglucinol-Derived Carbonaceous Materials Under Air and Vacuum. [PDF]
Olla C, Stagi L, Chiriu D, Carbonaro CM.
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Photoluminescence and photoluminescence excitation study of CuGaTe2
Journal of Applied Physics, 1998Photoluminescence (PL) and photoluminescence excitation measurements over a temperature range 12 K<T<300 K on high quality CuGaTe2 crystals grown by the vertical Bridgman method were completed. The whole PL spectrum consists of two regions.
Juri Krustok
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Quantum mechanics theory about photoluminescence is first introduced then applied to various case studies to understand the microscopic processes, namely photon excitation, energy relaxation and radiative recombination, involved in the photoluminescence ...
Wei Lu, Ying Fu
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On photoluminescence in HgGa2S4
Journal of Luminescence, 2005Abstract In this paper, we investigate the kinetics of photoluminescence in excited crystals of HgGa2S4 which have recently been proposed for implementing tunable luminescent devices. From photoluminescence experiments, performed at various temperatures and excitation powers, it appears that two kinds of radiative recombination processes take place ...
RICCI, PIER CARLO +2 more
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Photoluminescence and photoluminescence excitation spectroscopy of Al0.48In0.52As
Journal of Applied Physics, 1993A detailed study of the photoluminescence (PL) and photoluminescence excitation (PLE) properties of Al0.48In0.52As is presented. A PL linewidth of 13 meV and a Stokes shift of only 9 meV at 4.2 K both indicate that the effect of clustering is minimal in our samples. The Stokes shift is three times lower than the lowest reported in the literature.
S. M. Olsthoorn +3 more
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The photoluminescence of SrS:Cu nanophosphor
Nanotechnology, 2008Strontium sulfide doped with copper has been regarded as one of the most promising inorganic materials for the blue-green color phosphor. A wet chemical precipitation method with post-annealing is presented for the synthesis of copper-doped SrS nanoparticles. XRD studies revealed the phase purity of SrS particles with rocksalt structure.
E I, Anila, Arun, Aravind, M K, Jayaraj
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Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si
Solid State Communications, 1986ABSTRACTThe photoluminescence of GaAs/Si grown by OMCVD has been analyzed as a function of temperature and the dominant high temperature line identified as a conduction-band-to-valence-band transition. Photoluminescence excitation spectra indicate that the transition is excitonic at 4.2 K.
S. Zemon +4 more
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AIP Conference Proceedings, 1992
The band gap of Ga0.52In0.48P varies considerably, depending on conditions of growth. This is a result of ordering in the CuPt structure. Details of the ordering also lead to more subtle optical effects. We report here on photoluminescence (PL) and photoluminescence excitation (PLE) measurements on ordered and disordered Ga0.52In0.48P.
M. C. DeLong +8 more
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The band gap of Ga0.52In0.48P varies considerably, depending on conditions of growth. This is a result of ordering in the CuPt structure. Details of the ordering also lead to more subtle optical effects. We report here on photoluminescence (PL) and photoluminescence excitation (PLE) measurements on ordered and disordered Ga0.52In0.48P.
M. C. DeLong +8 more
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Photoluminescence: Science and Applications
2007In the past five years photoluminescence (PL) of SWNTs has gone from discoveryto one of the most actively researched areas, with broad impact on the basic scienceof SWNTs, as well as the promise of applications. The simplest free-carrier models ofperfect semiconducting SWNTs in vacuum predict that they have direct bandgapsand therefore should be ...
Finnie, Paul, Lefebvre, J., Maruyama, S.
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Photoluminescence of SrS:Cu phosphors
Solid State Communications, 1978Abstract Results of the investigation on the spectral characteristics of PL of SrS:Cu phosphors are presented. Probable emitters for the three observed bands, viz. 4710 A, 5200 A and 5480 A, have been suggested.
B.B. Laud, V.W. Kulkarni
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