Results 261 to 270 of about 134,154 (310)
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Reciprocal-space analysis of photoluminescence and photoluminescence excitation spectra
Applied Physics Letters, 1996We show that energy positions of features in photoluminescence and photoluminescence excitation (PLE) spectra can be obtained more accurately by Fourier transforming segments of these spectra and analyzing the resulting coefficients in reciprocal space than by using conventional real-space analysis.
S. D. Yoo +3 more
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Photoluminescence of SrS:Cu phosphors
Solid State Communications, 1978Abstract Results of the investigation on the spectral characteristics of PL of SrS:Cu phosphors are presented. Probable emitters for the three observed bands, viz. 4710 A, 5200 A and 5480 A, have been suggested.
B.B. Laud, V.W. Kulkarni
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Journal of Applied Physics, 2019
In this work, we present a detailed investigation of the low temperature emission properties of ZnSeO alloys by means of photoluminescence, micro-photoluminescence, and time-resolved photoluminescence. We show that the low temperature broad photoluminescence spectrum of ZnSeO attributed to the recombination of localized excitons is composed of sharp ...
M. Wełna, M. Baranowski, R. Kudrawiec
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In this work, we present a detailed investigation of the low temperature emission properties of ZnSeO alloys by means of photoluminescence, micro-photoluminescence, and time-resolved photoluminescence. We show that the low temperature broad photoluminescence spectrum of ZnSeO attributed to the recombination of localized excitons is composed of sharp ...
M. Wełna, M. Baranowski, R. Kudrawiec
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Photoluminescent Layered Lanthanide Silicates
Journal of the American Chemical Society, 2004AbstractFor Abstract see ChemInform Abstract in Full Text.
Duarte, Ananias +6 more
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AIP Conference Proceedings, 1992
The band gap of Ga0.52In0.48P varies considerably, depending on conditions of growth. This is a result of ordering in the CuPt structure. Details of the ordering also lead to more subtle optical effects. We report here on photoluminescence (PL) and photoluminescence excitation (PLE) measurements on ordered and disordered Ga0.52In0.48P.
M. C. DeLong +8 more
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The band gap of Ga0.52In0.48P varies considerably, depending on conditions of growth. This is a result of ordering in the CuPt structure. Details of the ordering also lead to more subtle optical effects. We report here on photoluminescence (PL) and photoluminescence excitation (PLE) measurements on ordered and disordered Ga0.52In0.48P.
M. C. DeLong +8 more
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Photoluminescence: Science and Applications
2007In the past five years photoluminescence (PL) of SWNTs has gone from discoveryto one of the most actively researched areas, with broad impact on the basic scienceof SWNTs, as well as the promise of applications. The simplest free-carrier models ofperfect semiconducting SWNTs in vacuum predict that they have direct bandgapsand therefore should be ...
Finnie, Paul, Lefebvre, J., Maruyama, S.
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Physica Status Solidi (a), 1973
Systematic photoluminescence measurements of the p- and n- type GaSe have been carried out in the temperature range between b.2 and 300 K. The main results, reported here, are: 1) direct free exciton emission centered at 2.109 eV; 2) a structured emission localized between 2.103 and 2.060 eV and attributed to excitons bound to neutral acceptors; 3 ...
A. Cingolani +3 more
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Systematic photoluminescence measurements of the p- and n- type GaSe have been carried out in the temperature range between b.2 and 300 K. The main results, reported here, are: 1) direct free exciton emission centered at 2.109 eV; 2) a structured emission localized between 2.103 and 2.060 eV and attributed to excitons bound to neutral acceptors; 3 ...
A. Cingolani +3 more
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Journal of Applied Spectroscopy, 1997
Photoluminescence spectra of diffusion layers of zinc-doped indium phosphide were investigated. A study was made of diffusion layers obtained in different regimes. A diffusion process was conducted for 30 and 60 min at temperatures of 450–500°C. The photoluminescence spectra consisted of bands with E1=1.145 eV, E2=1.37 eV, E3=1.345 eV, E4=1.15 eV ...
Yu. S. Emel’yanenko +3 more
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Photoluminescence spectra of diffusion layers of zinc-doped indium phosphide were investigated. A study was made of diffusion layers obtained in different regimes. A diffusion process was conducted for 30 and 60 min at temperatures of 450–500°C. The photoluminescence spectra consisted of bands with E1=1.145 eV, E2=1.37 eV, E3=1.345 eV, E4=1.15 eV ...
Yu. S. Emel’yanenko +3 more
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The Photoluminescence of Flames
Physical Review, 1923Effect of light on the intensity of the flame spectra of Li, Na, Ca, and Sr.---The salted flame of an air-hydrogen blast lamp was illuminated with the full light from a tungsten lamp, a carbon arc, a mercury arc and an iron spark, and the intensity of the bands or lines emitted, as determined by a photometric balance method in connection with a ...
E. L. Nichols, H. L. Howes
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physica status solidi (b), 1988
AbstractThe photoluminescence and absorption in GaSe over the energy range 2.00 to 2.12 eV at 77 K is investigated under different conditions, namely with different excitation quantum energies and low and high pumping power. The observed features of the spectra are explained using the energetic band model proposed by Voitchovsky and Mercier.
I. I. Dobynde +3 more
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AbstractThe photoluminescence and absorption in GaSe over the energy range 2.00 to 2.12 eV at 77 K is investigated under different conditions, namely with different excitation quantum energies and low and high pumping power. The observed features of the spectra are explained using the energetic band model proposed by Voitchovsky and Mercier.
I. I. Dobynde +3 more
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