Results 211 to 220 of about 12,931 (263)

Spin-valve phototransistor

Applied Physics Letters, 2007
The spin-valve phototransistor is a semiconductor-ferromagnetic metal multilayer-semiconductor transistor operated by photoexciting hot electrons in the emitter semiconductor into a Schottky collector. This device uses an ultra-high vacuum-bonded float zone Si/multilayer/n-InP structure.
Biqin Huang, Igor Altfeder, Ian Appelbaum   +2 more
openaire   +1 more source

Reconfigurable Homojunction Phototransistor for Near-Zero Power Consumption Artificial Biomimetic Retina Function.

ACS Nano
Semiconductor photodetectors integrating preliminary signal-processing functions play a vital role in artificial biomimetic retina systems. Herein, we propose a tungsten diselenide (WSe2) phototransistor with a dual-layer gate dielectric and an ...
Zhao Han, Yichi Zhang, Qing Mi, Jie You, Ningning Zhang, Zhenyang Zhong, Zuimin Jiang, Hui Guo, Huiyong Hu, Liming Wang, Zhangming Zhu   +10 more
semanticscholar   +1 more source

Giant Photoresponsivity and External Quantum Efficiency in a Contact‐Engineered Broadband a‐IGZO Phototransistor

Advanced Functional Materials, 2022
Broadband photodetectors with a wide ultraviolet (UV)–visible (vis)–near‐infrared (NIR) spectral response reduce cost and form factors in smart sensing systems by using one rather than multiple devices for versatile applications.
Y. Lai, I-Ting Wang, T. Hou
semanticscholar   +1 more source

Silicon phototransistor vidicon

IEEE Transactions on Electron Devices, 1971
The use of silicon phototransistor arrays as high gain targets in vidicon camera tubes is shown to provide a sensitivity advantage. An analysis of device operating parameters indicates that signal enhancement can be obtained during both the write and read portions of an array element's duty cycle.
R.M. Madden, D.A. Kiewit, C.R. Crowell
openaire   +1 more source

Radiation-hardened phototransistor

IEEE Transactions on Nuclear Science, 1991
A radiation-hardened, monolithic, silicon bipolar phototransistor has been developed and produced. Common emitter current gain at 2 mA collector current is 225 and remains above 140 after irradiation of 1 E13 n/sq cm or 1 Mrad(Si). Device photoresponse to 820 nm light decreases about 30% after 1 Mrad(Si) exposure and 55% after 1 E13 n/sq cm irradiation
W.T. Matzen, R.A. Hawthorne, W.T. Kilian
openaire   +1 more source

Ultrasensitive and high-speed AlGaN/AlN solar-blind ultraviolet photodetector: a full-channel-self-depleted phototransistor by a virtual photogate

Photonics Research, 2022
High sensitivity, high solar rejection ratio, and fast response are essential characteristics for most practical applications of solar-blind ultraviolet (UV) detectors.
Jia‐ho Lu, Zesheng Lv, Xinjia Qiu, Shiquan Lai, Hao Jiang   +4 more
semanticscholar   +1 more source

Amorphous silicon phototransistors

Applied Physics Letters, 1990
An amorphous silicon field-effect phototransistor is fabricated using a processing technology compatible with conventional amorphous silicon-silicon nitride thin-film transistors. The phototransistor has an offset structure between the source and gate electrodes, where light is absorbed to produce a photocurrent.
Yoshiyuki Kaneko, Norio Koike, Ken Tsutsui, Toshihisa Tsukada   +3 more
openaire   +1 more source

Advanced IGZO Phototransistor Arrays: Enhancing Visible Light Detection Through Selectively Electrohydrodynamic Jet‐Printed Photocatalytic Layer Formation

Advanced Functional Materials
Exploring new horizons in phototransistors with an emphasis on mass customization is essential. Herein, a method for enhancing the performance of indium‐gallium‐zinc‐oxide (IGZO) phototransistors by incorporating a selectively formed tungsten trioxide ...
Jongyeop An, B. Kang, Sujin Jung, Kunho Moon, Jusung Chung, Seok min Hong, Kyungho Park, Jong Hyuk Ahn, Hyun Jae Kim   +8 more
semanticscholar   +1 more source

Bandlike Transport in FaPbBr3 Quantum Dot Phototransistor with High Hole Mobility and Ultrahigh Photodetectivity.

Nano letters (Print), 2022
Halide perovskites have been widely explored for numerous optoelectronic applications among which phototransistors have appeared as one of the most promising light signal detectors.
Rodrigo Ferreira, Monirul Shaikh, S. K. Jakka, J. Deuermeier, P. Barquinha, Saurabh Ghosh, E. Fortunato, R. Martins, S. Jana   +8 more
semanticscholar   +1 more source

Vertically Stacked Full Color Quantum Dots Phototransistor Arrays for High‐Resolution and Enhanced Color‐Selective Imaging

Advances in Materials, 2021
Color‐selective multifunctional and multiplexed photodetectors have attracted considerable interest with the increasing demand for color filter‐free optoelectronics which can simultaneously process multispectral signal via minimized system complexity ...
Jaehyun Kim, Chanho Jo, Myung‐Gil Kim, G. Park, T. Marks, A. Facchetti, S. Park   +6 more
semanticscholar   +1 more source