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Organic heterojunction phototransistor
Journal of Applied Physics, 2002We propose an organic heterojunction phototransistor stacked with organic layers of electron and hole transport materials. The materials used in this study are perylene derivative (td-PTC) as the ultrathin base layer and triphenylamine derivative (TPD) as the emitter and collector layers.
Takehiro Zukawa +3 more
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Organic Light Detectors: Photodiodes and Phototransistors
Advanced Materials, 2013AbstractWhile organic electronics is mostly dominated by light‐emitting diodes, photovoltaic cells and transistors, optoelectronics properties peculiar to organic semiconductors make them interesting candidates for the development of innovative and disruptive applications also in the field of light signal detection.
K. Baeg +4 more
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Advanced Optical Materials, 2022
Better control of the channel is crucial to improve the performance of existing electron devices. A phototransistor with a specifically designed dual‐gate structure based on a vertical van der Waals heterojunction of WS2 and MoS2 is proposed.
Yichi Zhang +9 more
semanticscholar +1 more source
Better control of the channel is crucial to improve the performance of existing electron devices. A phototransistor with a specifically designed dual‐gate structure based on a vertical van der Waals heterojunction of WS2 and MoS2 is proposed.
Yichi Zhang +9 more
semanticscholar +1 more source
2014
In this thesis, two kinds of punch-through phototransistors were studied. GaAs-AlGaAs heterojunction punch-through phototransistors (HPTPTs) were realized by employing Molecular Beam Epitaxy (MBE) growth and standard wet etching processing technology. Dark I-V characteristics were experimentally studied.
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In this thesis, two kinds of punch-through phototransistors were studied. GaAs-AlGaAs heterojunction punch-through phototransistors (HPTPTs) were realized by employing Molecular Beam Epitaxy (MBE) growth and standard wet etching processing technology. Dark I-V characteristics were experimentally studied.
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Phototransistor noise model based on noise measurements on PNP PIN phototransistors
Optical and Quantum Electronics, 2014A noise model for phototransistors in open base configuration is presented. The model was developed from the noise measurements on four different phototransistor designs. The extracted current gains from the noise model were verified by measured current gains from Gummel measurements.
Wolfgang Gaberl +3 more
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Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga2O3/MgO Heterostructure-Based Phototransistor
, 2021Deep-ultraviolet (DUV) photodetectors based on wide-band-gap semiconductors have attracted significant interest across a wide range of applications in the industrial, biological, environmental, and...
Jung-Ho Ahn +9 more
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NIR polymers and phototransistors
Journal of Materials Chemistry C, 2018A novel bisthiophene-fused diketopyrrolopyrrole unit (4,11-bis(2-octyldodecyl)-7H,14H-thieno[3′,2′:7,8]indolizino[2,1-a]thieno[3,2-g]indolizine-7,14-dione, BTI) has been designed as an electron acceptor and used to copolymerize with thiophene and bithiophene as electron donors to construct two D–A conjugated polymers, P1 and P2via Stille coupling ...
Lanchao Ma +7 more
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InP/InGaAs heterojunction phototransistors
IEEE Journal of Quantum Electronics, 1981We describe the fabrication and device characteristics of experimental back-illuminated InP/InGaAs n-p-n heterojunction phototransistors. These devices exhibit photoresponse in the wavelength range of 0.95-1.6 \mu m. An optical gain of 40 at an input power of 1 nW (an improvement of 1000 in sensitivity over previously reported phototransistors) has ...
null Joe Campbell +3 more
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Active pixel sensor matrix based on monolayer MoS2 phototransistor array
Nature Materials, 2022Akhil Dodda +13 more
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