Results 21 to 30 of about 12,931 (263)

Ultraviolet Photodetection Application in Magnesium Indium Oxide Thin Film Transistors via Co-Sputtering Deposition

open access: yesApplied Sciences, 2020
A magnesium-doped indium oxide (In2O3:Mg) ultraviolet (UV) thin film phototransistor was fabricated via cosputtering of MgO and In2O3. Three samples with different sputtering power values of In2O3 ranging from 40 to 60 W, namely, sample A with 40 W ...
Chih-Chiang Yang   +4 more
doaj   +1 more source

High-performance near-infrared photodetector based on nano-layered MoSe2 [PDF]

open access: yes, 2017
In recent years, the integration of two-dimensional (2D) nanomaterials, especially transition metal chalcogendies (TMCs) and dichalcogendies (TMDCs), into electronic devices have been extensively studied owing to their exceptional physical properties ...
Abdelkader Abderrahmane   +3 more
core   +2 more sources

Halide perovskite quantum dot based 0D-2D mixed-dimensional heterostructure photodetectors: progress and challenges

open access: yes工程科学学报, 2019
Due to various advantages such as outstanding light absorption coefficient, long charge carrier diffusion distance, simple synthesis method, and low cost, halide perovskite materials, which are light absorption materials, are widely considered as ...
KANG Zhuo   +3 more
doaj   +1 more source

PENGUJIAN SENSOR CAHAYA PHOTOTRANSISTOR DAN PHOTODIODE PADA PEMANTAU DENYUT JANTUNG DENGAN METODE PHOTOPLETHYSMOGRAPH REFLEKSI

open access: yesSimetris: Jurnal Teknik Mesin, Elektro dan Ilmu Komputer, 2019
Penelitian ini dilakukan karena banyaknya penyakit yang diakibatkan gangguan fungsi jantung dan pembuluh darah yang tidak terdeteksi secara dini. Pada makalah ini menyajikan pengujian dan pembuatan alat pemantau denyut jantung dengan sensor cahaya ...
Antonius Hendro Noviyanto
doaj   +1 more source

High Performance Graphene–C60–Bismuth Telluride–C60–Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses

open access: yesAdvanced Science, 2023
Graphene is a promising candidate for the next‐generation infrared array image sensors at room temperature due to its high mobility, tunable energy band, wide band absorption, and compatibility with complementary metal oxide semiconductor process ...
Rui Pan   +11 more
doaj   +1 more source

Multifunctional homojunction gallium arsenide n–p–m-structure [PDF]

open access: yesТехнологія та конструювання в електронній апаратурі, 2009
The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are ...
A. V. Karimov   +4 more
doaj   +1 more source

Organic photodetectors based on supramolecular nanostructures

open access: yesSmartMat, 2020
Self‐assembly of semiconducting (macro)molecules enables the development of materials with tailored‐made properties which could be used as active components for optoelectronics applications. Supramolecular nanostructures combine the merits of soft matter
Yifan Yao   +3 more
doaj   +1 more source

Phototransistor Behavior in CIGS Solar Cells and the Effect of the Back Contact Barrier

open access: yesEnergies, 2020
In this paper, the impact of the back contact barrier on the performance of Cu (In, Ga) Se2 solar cells is addressed. This effect is clearly visible at lower temperatures, but it also influences the fundamental parameters of a solar cell, such as open ...
Ricardo Vidal Lorbada   +6 more
doaj   +1 more source

Development of a tabletop guidance system for educational robots [PDF]

open access: yes, 2011
The guidance of a vehicle in an outdoor setting is typically implemented using a Real Time Kinematic Global Positioning System (RTK-GPS) potentially enhanced by auxiliary sensors such as electronic compasses, rotation encoders, gyroscopes, and vision ...
Bac, C.W., Grift, T.E., Menezes, G.
core   +2 more sources

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

open access: yesScientific Reports, 2021
Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with
Seung-Hye Baek   +3 more
doaj   +1 more source

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