Results 21 to 30 of about 12,931 (263)
A magnesium-doped indium oxide (In2O3:Mg) ultraviolet (UV) thin film phototransistor was fabricated via cosputtering of MgO and In2O3. Three samples with different sputtering power values of In2O3 ranging from 40 to 60 W, namely, sample A with 40 W ...
Chih-Chiang Yang +4 more
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High-performance near-infrared photodetector based on nano-layered MoSe2 [PDF]
In recent years, the integration of two-dimensional (2D) nanomaterials, especially transition metal chalcogendies (TMCs) and dichalcogendies (TMDCs), into electronic devices have been extensively studied owing to their exceptional physical properties ...
Abdelkader Abderrahmane +3 more
core +2 more sources
Due to various advantages such as outstanding light absorption coefficient, long charge carrier diffusion distance, simple synthesis method, and low cost, halide perovskite materials, which are light absorption materials, are widely considered as ...
KANG Zhuo +3 more
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Penelitian ini dilakukan karena banyaknya penyakit yang diakibatkan gangguan fungsi jantung dan pembuluh darah yang tidak terdeteksi secara dini. Pada makalah ini menyajikan pengujian dan pembuatan alat pemantau denyut jantung dengan sensor cahaya ...
Antonius Hendro Noviyanto
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Graphene is a promising candidate for the next‐generation infrared array image sensors at room temperature due to its high mobility, tunable energy band, wide band absorption, and compatibility with complementary metal oxide semiconductor process ...
Rui Pan +11 more
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Multifunctional homojunction gallium arsenide n–p–m-structure [PDF]
The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are ...
A. V. Karimov +4 more
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Organic photodetectors based on supramolecular nanostructures
Self‐assembly of semiconducting (macro)molecules enables the development of materials with tailored‐made properties which could be used as active components for optoelectronics applications. Supramolecular nanostructures combine the merits of soft matter
Yifan Yao +3 more
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Phototransistor Behavior in CIGS Solar Cells and the Effect of the Back Contact Barrier
In this paper, the impact of the back contact barrier on the performance of Cu (In, Ga) Se2 solar cells is addressed. This effect is clearly visible at lower temperatures, but it also influences the fundamental parameters of a solar cell, such as open ...
Ricardo Vidal Lorbada +6 more
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Development of a tabletop guidance system for educational robots [PDF]
The guidance of a vehicle in an outdoor setting is typically implemented using a Real Time Kinematic Global Positioning System (RTK-GPS) potentially enhanced by auxiliary sensors such as electronic compasses, rotation encoders, gyroscopes, and vision ...
Bac, C.W., Grift, T.E., Menezes, G.
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Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with
Seung-Hye Baek +3 more
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