Results 71 to 80 of about 12,931 (263)

Wafer‐Scale Bandgap‐Tunable MoS2/PbS Phototransistors Enabled by Solution Processing

open access: yesAdvanced Science, EarlyView.
This work advances bandgap‐tunable MoS2/PbS phototransistors by introducing lateral heterojunctions, which enable superior tunable bandgap (1.24–0.61 eV) via Type‐II alignment. Plasma‐enhanced solution processing ensures uniform 4‐inch wafer‐scale fabrication with 97% yield.
Ziheng Tang   +5 more
wiley   +1 more source

An On‐Demand Neuromorphic Vision System Enabled by a Multi‐Paradigm Neuromorphic Device and Hierarchical Reconfigurability Designed from Device to System Level

open access: yesAdvanced Science, EarlyView.
An on‐demand ultra‐reconfigurable intelligent vision system with hierarchical reconfigurability from device to system levels is demonstrated. Through co‐design of a multi‐paradigm device, reconfigurable circuits, and adaptive system architecture/algorithms, the system enables seamless switching among spiking, non‐spiking, neuromorphic imaging (NI), and
Biyi Jiang   +7 more
wiley   +1 more source

Alcohol‐sensitive MoS2 optoelectronic synapses for mimicking human‐like visual adaptation

open access: yesInfoMat
The rapid advancements in humanoid robotics and autonomous driving demand smart artificial optoelectronic vision systems that can emulate human‐like perception.
Xiao Liu   +8 more
doaj   +1 more source

Improved optical performance of multi-layer MoS2 phototransistor with see-through metal electrode

open access: yesNano Convergence, 2019
In recent years, MoS2 has emerged as a prime material for photodetector as well as phototransistor applications. Usually, the higher density of state and relatively narrow bandgap of multi-layer MoS2 give it an edge over monolayer MoS2 for ...
Junghak Park   +5 more
doaj   +1 more source

Characterization of High Temperature Optocoupler for Power Electronic Systems [PDF]

open access: yes, 2019
High-temperature devices have been rapidly increas due to the implementation of new technologies like silicon carbide, high-temperature ceramic, and others. Functionality under elevated temperatures can reduce signal integrity reducing the reliability of
Gonzalez, David
core   +2 more sources

COMPUTER-GENERATED HOLOGRAM ETCHED IN GAAS FOR OPTICAL INTERCONNECTION OF VLSI CIRCUITS [PDF]

open access: yes, 1992
By integrating, on a wafer plane, GaAs semiconductor optoelectronic modulators and detectors with computer-generated holograms between then, the potential for in-plane interconnections is proposed.
CAREY, CD   +4 more
core   +1 more source

Band-like transport in small-molecule thin films toward high mobility and ultrahigh detectivity phototransistor arrays

open access: yesNature Communications, 2019
With the fast development of organic electronics, organic semiconductors have been extensively studied for various optoelectronic applications, among which organic phototransistors recently emerged as one of the most promising light signal detectors ...
Deyang Ji   +10 more
semanticscholar   +1 more source

Single‐Crystal PZT‐Driven Organic Piezo‐Phototronic Adaptive Transistors Toward Advanced Spatiotemporal Visual Computing

open access: yesAdvanced Science, EarlyView.
Here, we propose a single‐crystal PZT‐based piezo‐phototronic organic adaptive memory transistor (OAMT), achieving a record memory window capacity factor (γ) of 0.87 at a low SS of 200 mV/decade via efficient multi‐field control. The device achieves a high recognition accuracy ∼ 90% in neuromorphic simulations, demonstrates robust fault tolerance under
Chenhao Xu   +8 more
wiley   +1 more source

MoS2-HgTe Quantum Dot Hybrid Photodetectors beyond 2 μm [PDF]

open access: yes, 2017
Mercury telluride (HgTe) colloidal quantum dots (CQDs) have been developed as promising materials for the short and mid-wave infrared photodetection applications because of their low cost, solution processing and size tunable absorption in the short wave-
Barkhouse   +37 more
core   +4 more sources

All‐Optical Control of Bidirectional Polarization Switching in Ferroelectric Heterostructures for Neuromorphic and In‐Memory Computing

open access: yesAdvanced Science, EarlyView.
We propose an optical ferroelectric field‐effect transistor, composed of a MoS2/CIPS heterostructure, demonstrates the feasibility of all‐optical nonvolatile memory, neuromorphic computing, and logic‐in‐memory operations. The device exhibits reversible light‐controlled memory states, retina‐like synaptic plasticity, and wavelength‐selective ...
Jingjie Niu   +7 more
wiley   +1 more source

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