Results 201 to 210 of about 4,228 (259)
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Differential Piezoresistive Pressure Sensor
2007 International Semiconductor Conference, 2007The pressure microsensor presented in this paper is based on a thin, elastic membrane, with boron implanted piezoresistive elements included, positioned in the maximum mechanical stress areas on the membrane. The pressure range for the developed sensors is in the 0divide400 mbar range, and this is the main novelty of this device.
B. Firtat +4 more
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A silicon piezoresistive pressure sensor
Proceedings First IEEE International Workshop on Electronic Design, Test and Applications '2002, 2003The paper describes the design, simulation and fabrication of a silicon pressure sensor. The device makes use a of monocrystalline silicon square diaphragm supported by a thick silicon rim. The diaphragm is fabricated by etching away the bulk silicon on a defined region until the required thickness is achieved.
R. Singh +3 more
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Optoelectronic Enhancement for Piezoresistive Pressure Sensor
2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS), 2020Pressure sensing is a critical task of microelectromechanical systems with a wide range of applications. Enhancing the performance such as sensitivity, durability, reliability, linearity and response time of pressure sensors has always been a top priority for researchers and technology developers.
Thanh Nguyen +6 more
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Piezoresistive Pressure Sensors
2020Information about pressure and its measurement by means of pressure sensors is interesting in many different application areas. Contemporary applications, as for example the automotive industry, aerospace and medical technology, require ever smaller, adaptable and highly accurate pressure sensors.
Stephanus Büttgenbach +3 more
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Noise in piezoresistive pressure sensors
2015 International Conference on Noise and Fluctuations (ICNF), 2015In this paper we present the results of noise analysis in piezoresistive ceramic pressure sensors (CPSs) prepared by low temperature co-fired ceramics (LTCC) technology. For this study a piezoresistive CPSs in a full Wheatstone-bridge configuration were prepared. Low frequency noise measurements can be used for the quality evaluation of CPSs.
V. Sedlakova +6 more
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Harsh environment piezoresistive pressure sensors
2017 IEEE SENSORS, 2017The capability to ensure reliability while operating in extreme environments is important for the most demanding automotive applications. Even though pressure sensors are a well-established area in the MEMS industry, improvements in sensor design are needed to deliver reliability and long operational life. This paper reports the design, fabrication and
F. Alfaro, G. van Sprakelaar, J. Gaynor
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Self-compensating piezoresistive pressure sensor
Sensors and Actuators A: Physical, 1994Abstract A double-bridge method of pressure-sensor compensation has been tested. Three types of sensors are produced: standard with a flat, square, thin membrane and single Wheatstone bridge with four diffused piezoresistors in standard configuration and new sensors with ‘cut’ piezoresistors and a flat or bossed square membrane with two identical ...
J. Dziuban +4 more
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Frequency output piezoresistive pressure sensor
Sensors and Actuators, 1983Abstract The sensitivity of silicon to strain and its application to the fabrication of integrated circuits enable sensors to be designed which provide the primary sensing and digital encoding of the signal within the same piece of material. One possible configuration, originally described by Reichl, uses a resistor as the basic sensor to vary the ...
P.J. French, A.P. Dorey
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A piezoresistive integrated pressure sensor
Sensors and Actuators, 1983Abstract A silicon piezoresistive integrated pressure sensor (IPS) containing sensing, temperature compensation and amplification circuits has been developed for automotive and industrial applications, etc. The chip of the IPS is bonded on a silicon support 2 mm thick, using an electrostatic bonding technique for reducing unwanted thermal stress from
Kazuji Yamada +3 more
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Electro-elastic simulation of a piezoresistive pressure sensor
Microelectronics Journal, 1993Transport properties of the silicon crystal are sensitive, to some extent, to mechanical perturbations: this allows for integrating mechanical sensors, together with the sensing circuitry, within a silicon chip by using an almost standard IC technology.
P. Ciampolini +3 more
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