Results 51 to 60 of about 2,028 (262)
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Squeezed branch piles, originally developed for building and bridge foundations, have been downsized and deployed at larger pile spacing for reinforcing embankments over soft soils.
Kunbiao Zhang +6 more
doaj +1 more source
Lateral Bearing Characteristics of Inclined Pile Foundation Under Combined Load
To study the lateral bearing characteristics of inclined pile foundations under the combined action of vertical and lateral loads, indoor model tests and numerical simulations were carried out in conjunction with the pile foundation selection project of ...
Longqi LI, Haoqiu ZHAO
doaj
It is vital to control the deformation of adjacent structures and displacement of ground caused by the excavation of underground super large space.Based on a span line adjacent to Liao gongzhuang Station which is a super large space excavation ...
Li Tao +4 more
doaj +1 more source
Dans la présente étude, l'interaction entre le chapeau de pieux RC et le sol a été étudiée expérimentalement en testant douze chapeaux de pieux RC à demi-échelle. Deux paramètres principaux ont été pris en compte dans le programme expérimental ; le premier facteur était la densité relative du sol sableux de support.
Ali Basha +3 more
openaire +2 more sources
Toward Tunable Magnetic Dirac Semimetals: Mn Doping of Cd3As2
Dilute magnetic doping of topological semimetals offers a pathway to tune the topological phase via time reversal symmetry breaking. This is achieved by alloying the Dirac semimetal Cd3As2 with Mn via molecular beam epitaxy. Magnetotransport measurements provide preliminary evidence of changes to the electronic structure consistent with the emergence ...
Anthony D. Rice +10 more
wiley +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Orbital Geometry‐Governed Response of Pressure‐Tunable Quantum Defects in hBN
Defects in hBN act as ultrasensitive quantum manometers when the energy of the intradefect optical transitions is modified by lattice compression. The orbital geometry of the electron wave functions governs how electron hopping and Coulomb interactions react uniquely to the reduction of the van der Waals gap and in‐plane compression, leading to robust ...
Magdalena Grzeszczyk +6 more
wiley +1 more source
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Role of Cap Thickness in Pile-Cap Foundation [PDF]
Soukayna El Hammouli +3 more
openaire +1 more source

