Results 11 to 20 of about 63,086 (289)
Small Square Reconfigurable Antenna with Switchable Single/Tri-Band Functions [PDF]
A novel frequency reconfigurable slot antenna for suitable switchable radiations at WLAN and a tri-band at Bluetooth, WiMAX and upper WLAN applications is designed and fabricated.
M. Borhani Kakhki +3 more
doaj +3 more sources
Lately, metasurface has become an essential and promising component in implementing Intelligent Reflecting Surface (IRS) for 5G and 6G. A novel method that simplifies the ability to reconfigure the metasurface is presented in this paper.
David Rotshild +6 more
doaj +1 more source
A reconfigurable frequency selective surface, FSS, associating cross dipoles and matryoshka geometries is described in this paper. The proposed reconfigurable FSS uses as active element PIN diodes.
Alfredo Gomes Neto +5 more
doaj +1 more source
PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCAD
The article is devoted to the modeling of a two-bit pin-diode. The possibility of programming opening time of the device based on the pin-diode is shown. The design consisting of a pin diode and two floating gates on the surface of i-region is considered.
Alexander A. Danilenko +6 more
doaj +1 more source
Continuous Resonance Tuning without Blindness by Applying Nonlinear Properties of PIN Diodes
Metamaterial antennas consisting of periodical units are suitable for achieving tunable properties by employing active elements to each unit. However, for compact metamaterials with a very limited number of periodical units, resonance blindness exists ...
Yong Luo +4 more
doaj +1 more source
Design and Development of Frequency Agile Reflectarray Antenna
This paper presents the design of a frequency reconfigurable reflectarray with concentric circular rings. The PIN diode connected between a phase delay line and the ring produces reconfigured resonances at 16 GHz and 10.4 GHz.
Kavitha Narayanasamy +3 more
doaj +1 more source
Accurate analytical modeling for switching energy of PiN diodes reverse recovery [PDF]
PiN diodes are known to significantly contribute to switching energy as a result of reverse-recovery charge during turn-off. At high switching rates, the overlap between the high peak reserve-recovery current and the high peak voltage overshoot ...
Alatise, Olayiwola M. +3 more
core +3 more sources
Different semiconductor materials have been used for the fabrication of PIN diodes such as Si, Ge, GaAs, SiC-3C, SiC-4H, and InAs. These different semiconductor materials show different characteristics and advantages such as SiC-4H is ultrafast switch ...
Sonia Sharma +5 more
doaj +1 more source
Measurement of photo capacitance in amorphous silicon photodiodes [PDF]
This paper discusses the photodiode capacitance dependence on imposed light and applied voltage using different devices. The first device is a double amorphous silicon pin-pin photodiode; the second one a crystalline pin diode and the last one a single ...
Fantoni, Alessandro +4 more
core +2 more sources
In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor (MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting numerical technology computer-aided design simulations.
Junghun Kim, Kwangsoo Kim
doaj +1 more source

