Results 231 to 240 of about 309,668 (289)
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1982
PIN-Dioden sind Bauelemente mit einer Dreischichtstruktur, gekennzeichnet durch eine moglichst undotierte (intrinsic: i) Mittelzone sowie zwei hochdotierte Kontaktzonen (p+, n+) unterschiedlichen Leitungstyps (pin-Struktur). Dieser Aufbau erzeugt ein Bauelement mit hoher Impedanzvariation zwischen Flus- und Sperrbetrieb.
Günther Kesel +2 more
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PIN-Dioden sind Bauelemente mit einer Dreischichtstruktur, gekennzeichnet durch eine moglichst undotierte (intrinsic: i) Mittelzone sowie zwei hochdotierte Kontaktzonen (p+, n+) unterschiedlichen Leitungstyps (pin-Struktur). Dieser Aufbau erzeugt ein Bauelement mit hoher Impedanzvariation zwischen Flus- und Sperrbetrieb.
Günther Kesel +2 more
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Avalanche breakdown in read diodes and pin diodes
Solid-State Electronics, 1968Abstract The avalanche breakdown voltages, VB, for Ge and Si Read (p+nin+ or n+pip+) and pin diodes have been evaluated numerically. For the idealized Read diode the static characteristics of the avalanche region, namely the breakdown field, the width of the avalanche region and the voltage drop, VA, across the avalanche region have also been ...
G. Gibbons, S.M. Sze
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Performance of a neutron spectrometer based on a PIN diode
Radiation Protection Dosimetry, 2005The neutron spectrometer discussed in this work consists of a PIN diode coupled with a polyethylene converter. Neutrons are detected through the energy deposited by recoil-protons in silicon. The maximum detectable energy is -6 MeV and is imposed by the thickness of the fully depleted layer (300 microm for the present device).
GIULINI CASTIGLIONI AGOSTEO, STEFANO LUIGI MARIA +6 more
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Numerical Modelling of PIN Diodes
IMA Journal of Numerical Analysis, 1984Summary: The coupled non-linear partial differential equations describing the behaviour of PIN diodes are solved using a conservative finite-difference scheme. For such problems the conservation of certain quantities is particularly important and the consistency of the numerical scheme is demonstrated.
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Heterojunction PIN diode switch
IEEE MTT-S International Microwave Symposium Digest, 2003, 2003This paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a replacement for the homojunction GaAs PIN diodes commonly used in microwave systems as a control element for commercial and military switch applications up through millimeter wave frequencies. In particular, a single heterojunction PIN diode, when simulated at a bias of
D. Hoag +4 more
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PIN-diodes for electron detection
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989Abstract The counting and spectroscopy of conversion electrons and β-rays was tested with PIN-diodes. The diodes were used in air at normal pressure and at different operational temperatures. The energy resolution and low-energy detection thresholds as well as the time resolution for coincidence counting were measured.
W.-D. Schmidt-Ott +2 more
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3rd European Microwave Conference, 1973, 1973
Theory and experiments are presented relating PIN diode junction properties to limit level, spike leakage, and recovery.
R. Garver, F. Reggia, R. Callow
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Theory and experiments are presented relating PIN diode junction properties to limit level, spike leakage, and recovery.
R. Garver, F. Reggia, R. Callow
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1982
The selection of a PIN to perform a particular microwave switching function begins with the choice of the size of the I region — specifically, its thickness, W, and cross sectional area, A. In practice, however, this characterization is usually accomplished using the related variables junction capacitance, CJ, which depends upon both A and W, and bulk ...
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The selection of a PIN to perform a particular microwave switching function begins with the choice of the size of the I region — specifically, its thickness, W, and cross sectional area, A. In practice, however, this characterization is usually accomplished using the related variables junction capacitance, CJ, which depends upon both A and W, and bulk ...
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Silicon-on-Insulator Pin Diodes.
1987Abstract : Microwave monolithic integrated circuit (MMMIC) technology using recrystallized silicon-on-insulator substrates would permit PIN diode phase shifters to be fabricated with higher power-handling capability and lower insertion loss than conventional MMIC control circuits using GaAs MESFETs.
Stephen Wu +3 more
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2010 Second Pacific-Asia Conference on Circuits, Communications and System, 2010
In this paper, a multi-application PIN diode is presented. The PIN diode structure is similar to conventional PIN diodes, but only difference is that a layer is used in the middle of layers. The diode has 4 pins. Proportional to the applied voltage to the two control pins, it can be achieved a value arbitrary of series capacitance and resistance.
Ebrahim Abiri +3 more
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In this paper, a multi-application PIN diode is presented. The PIN diode structure is similar to conventional PIN diodes, but only difference is that a layer is used in the middle of layers. The diode has 4 pins. Proportional to the applied voltage to the two control pins, it can be achieved a value arbitrary of series capacitance and resistance.
Ebrahim Abiri +3 more
openaire +1 more source