Results 291 to 300 of about 777,156 (336)

Monolithic High Power 300 Watt, S-Band, HMIC PIN Diode Limiter

IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, 2019
A monolithic multi-stage high power silicon/HMIC PIN diode limiter that covers the full range of UHF to S-Band frequencies has been designed that is capable of handling up to 300 watts CW of incident RF power.
T. Boles, Joseph Bukowski, J. Brogle
semanticscholar   +1 more source

Silicon carbide PIN diode detectors used in harsh neutron irradiation

Sensors and Actuators A: Physical, 2018
Silicon carbide (SiC) neutron detectors based on PIN diode with Ti/Au electrode structure have been successfully developed and considered to be a good option for neutron detection related to harsh radiation environment, but these detectors suffered ...
Linyue Liu, Fangpei Li, S. Bai, Jin Peng, Xingzhong Cao, X. Ouyang   +5 more
semanticscholar   +1 more source

Microstrip PIN diode microwave switch

Radioelectronics and Communications Systems, 2011
A possibility of creating narrow-band electrically controlled microwave breakers and switches with enhanced attenuation level in the blocking mode has been considered. The specified devices are based on the structure containing a short-circuited microstrip link with connected capacitor and the loop coupler, in the center of which is located a PIN diode.
Usanov, Dmitry A., Skripal, A. V., Kulikov, M. Yu.   +2 more
openaire   +2 more sources

High speed high voltage PIN diode driver

IEEE International Symposium on Industrial Electronics. Proceedings. ISIE'98 (Cat. No.98TH8357), 2002
A driver circuit for an RF PIN diode switch is described, the circuit features an efficient means of removing stored charge from the PIN diode, ensuring rapid switching between the forward and reverse biased states and low current consumption from the HV supply.
van Niekerk C., van der Walt P.W.
openaire   +1 more source

The influence of microwave pulse repetition frequency on the thermal burnout effect of a PIN diode limiting-amplifying system

Microelectronics and reliability, 2018
This paper analyzes the influence of the microwave pulse repetition frequency on the thermal burnout effect of a PIN diode limiting-amplifying system. Based on the study of the single-shot microwave pulse thermal burnout effect and by introducing a new ...
Shipeng Yi, Zhengwei Du
semanticscholar   +1 more source

Noise characterization of a-Si:H pin diodes

Journal of Non-Crystalline Solids, 2006
Abstract Dark current noise power spectral density of a series of a-Si:H pin diodes with different i layer thicknesses (400 and 130 nm) and front contact material (SnO2 and Cr) was measured at different forward and reverse bias. Considering static and dynamic properties of the measurement system and diodes themselves, parameters of thermal, shot and ...
Jankovec, M., Stiebig, Helmut, Smole, F., Topic, M.   +3 more
openaire   +1 more source

Physical Modelling of 4H-SiC PiN Diodes

Materials Science Forum, 2012
With the recent technological advances in 4H-SiC PiN diode fabrication, simulation tools which enable the accurate and rapid prediction of losses of such devices in power electronics circuits will be increasingly sought-after. To this end, a physical electro-thermal model of the 4H-SiC PiN diode has been developed, which facilitates device optimization
Craig A. Fisher, Michael R. Jennings, Angus T. Bryant, Amador Pérez-Tomás, Peter Michael Gammon, Pierre Brosselard, Philippe Godignon, Philip Andrew Mawby   +7 more
openaire   +1 more source

Practical PIN Diodes

1982
The selection of a PIN to perform a particular microwave switching function begins with the choice of the size of the I region — specifically, its thickness, W, and cross sectional area, A. In practice, however, this characterization is usually accomplished using the related variables junction capacitance, CJ, which depends upon both A and W, and bulk ...
openaire   +1 more source

Transient response of PIN limiter diodes

IEEE MTT-S International Microwave Symposium Digest, 2003
Results of experimental and theoretical studies have determined which physical parameters of PIN diode junctions control their dynamic responses as limiters to fast-risetime microwave pulses. Both RF and DC dynamic impedance measurements were made and compared, with good agreement, to theoretical calculations which model both the junction and intrinsic
R.J. Tan, A.L. Ward, R. Kaul
openaire   +1 more source

Prediction of PIN diode reverse recovery

2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551), 2004
Generally, the reverse recovery issue of diode is difficult to deal with, which causes large added loss and EMI. Different down slopes for diode reverse voltage mean different working conditions, and this paper shows you the general concept with different down slopes and how to predict the reverse recovery current to calculate the relative switching ...
null Yueqing Wang, null Qingyou Zhang, null Jianping Ying, null Chaoqun Sun   +3 more
openaire   +1 more source