Results 61 to 70 of about 63,086 (289)
Ultrafast GaAs microwave PIN diode
This letter describes what is believed to be the first successful realisation of GaAs PIN diodes. The vertical structure was grown on an n+ substrate by MOCVD of a 2 μm, 1015 cm−3 unintentionally doped n− layer followed by a 0.3 μm, 4×1019 cm−3 Zn doped p+ layer. The isolation and insertion loss of a single shunt-mounted device are typically −27 dB and
R. Tayrani, R.W. Glew
openaire +1 more source
Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications [PDF]
A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles ...
Ashby, J. +8 more
core +1 more source
Tailoring the Properties of Functional Materials With N‐Oxides
The properties of materials bearing N‐oxide groups are often dominated by the polar N+─O− bond. It provides hydrophilicity, selective ion‐binding, electric conductivity, or antifouling properties. Many of the underlying mechanisms have only recently been discovered, and the interest in N‐oxide materials is rapidly growing.
Timo Friedrich +5 more
wiley +1 more source
Operating principles of pin diodes
AbstractAnalytical models of the pin diode in a small‐current operation are not known yet. This article presents a simple analytical model of the pin diode operation with its confirmation by a numerical simulation. At the onset, carrier recombinations are not included for the sake of simplicity. The exact JF−VF characteristic $[J_{F} \propto \hbox{exp}(
openaire +2 more sources
A single-layer tuneable microwave absorber using an active FSS [PDF]
An experimental single-layer active microwave absorber in described. The absorber is a planar structure based upon the topology of a Salisbury screen, but in which the conventional resistive layer is replaced by an active frequency selective surface (FSS)
Chambers, B., Tennant, A.
core +1 more source
Two‐photon lithography (TPL) enables 3D magnetic nanostructures with unmatched freedom in geometry and material choice. Advances in voxel control, deposition, and functionalization open pathways to artificial spin ices, racetracks, microrobots, and a number of additional technological applications.
Joseph Askey +5 more
wiley +1 more source
Radiation-hard ASICs for optical data transmission in the ATLAS pixel detector [PDF]
We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the LHC at CERN: a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the detector, and a Bi ...
Arms, K E +14 more
core +3 more sources
A minimally invasive, transepithelial corneal cross‐linking (TE‐CXL) approach is presented using upconversion nanoparticles (UCNPs)‐loaded contact lenses (UCLs), after topical delivery of hyaluronate–riboflavin conjugates. The NIR‐to‐UV/blue light conversion by UCNPs in a UCL can activate riboflavin for TE‐CXL, resulting in the biomechanical strength ...
Gibum Lee +8 more
wiley +1 more source
The combination of formamidinium thiocyanate and 1,3‐propane diammonium iodide for bulk and top‐surface passivation, and a ternary fullerene blend to improve energy band alignment, suppresses energy losses in wide‐bandgap FAPbBr3 perovskite solar cells.
Laura Bellini +9 more
wiley +1 more source
Compact Frontend-Electronics and Bidirectional 3.3 Gbps Optical Datalink for Fast Proportional Chamber Readout [PDF]
The 9600 channels of the multi-wire proportional chamber of the H1 experiment at HERA have to be read out within 96 ns and made available to the trigger system.
B Meier +20 more
core +2 more sources

