Results 221 to 230 of about 40,433 (286)

Reconfigurable Memristive Quasi-Lumped Dual-Band Bandpass Filters. [PDF]

Micromachines (Basel)
Miljanović D, Potrebić Ivaniš M, Marković I.   +2 more
europepmc   +1 more source

Progress Toward Efficient Wide‐Gap Cu(In,Ga)(S,Se)2 Thin‐Film Solar Cells

Progress in Photovoltaics: Research and Applications, EarlyView.
Wide‐gap Cu (In,Ga)(S,Se)2 thin‐film solar cells are studied in view of their performance, limitations, and opportunities for further optimization. Different sources of open circuit voltage limitations were discussed and weighted. Interface recombination appears the main recombination channel, which however can be influenced heavy alkali treatment ...
Setareh Zahedi‐Azad, Roland Scheer, Dimitrios Hariskos, Stefan Paetel, Wolfram Hempel, Wolfram Witte, Hao Luo, Oana Cojocaru‐Mirédin, Mary Blankenship, Dirk Hauschild, Victor van Maris, Lothar Weinhardt, Clemens Heske, Thomas Unold, José A. Márquez, Jasmin Seeger, Florian Wilhelmi, Michael Hetterich, Thomas Niesen, Patrick Eraerds, Thomas Dalibor, Xiaowei Jin, Reinhard Schneider, Dagmar Gerthsen, Di Wang, Christian Kübel   +25 more
wiley   +1 more source

A Dual-Band Multi-Linear Polarization Reconfigurable Antenna for Body-Centric Wireless Communication Systems. [PDF]

Sensors (Basel)
Chen D, Liu F, Ruan X, Liu Y.
europepmc   +1 more source

Engineering Dosimetric Excellence In Total Body Irradiation: Tomotherapy‐Driven Protocols for Precision and Reproducibility

Precision Radiation Oncology, EarlyView.
• Objective: Assess helical Tomotherapy‐based TBI for clinical feasibility, dosimetric reproducibility, and in‐vivo accuracy using dual‐orientation simulation and patient‐specific QA. • Methodology: Implementation of ArcCHECK 3D diode array, ionization chamber verification, and in‐vivo dosimetry with OSLDs at 16 anatomical sites to ensure precise dose ...
Sandeep Singh, Dipesh, Supratik Sen, Abhay Kumar Singh, Mahipal, Manindra Bhushan, Jaskaran Singh Sethi, David K. Simson, Munish Gairola   +8 more
wiley   +1 more source

Frequency reconfigurable PIN diode-based Reuleaux-triangle-shaped monopole antenna for UWB/Ku band applications. [PDF]

Sci Rep
Bayer Keskin SE, Koziel S, Szczepanski S.   +2 more
europepmc   +1 more source

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim, Jae Cheol Shin   +8 more
wiley   +1 more source

Extraction of Electron and Hole Drift Velocities in Thin 4H-SiC PIN Detectors Using High-Frequency Readout Electronics. [PDF]

Sensors (Basel)
Gsponer A, Onder S, Gundacker S, Burin J, Knopf M, Radmanovac D, Waid S, Bergauer T.   +7 more
europepmc   +1 more source

White‐Light Flexible Crystal With 180° Folding Induced by Halogen‐Bond Network in Organic‐Inorganic Hybrid Perovskite

Rare Metals, EarlyView.
ABSTRACT Organic‐inorganic hybrid perovskites (OIHPs) with white‐light emission have significant potential in solid‐state lighting and display due to the designable structure and excellent luminescent properties. However, OIHPs are prone to damage during bending due to the brittleness of crystals, which limits their application in the field of flexible
Jinyu Xu, Yuelun Fu, Liwen Kang, Yuxuan You, Qiangqiang Chai, Junyan Wu, Shuaiqi Wang, Kuanguan Liu, Zhenghuan Lin   +8 more
wiley   +1 more source

Direct investigation of localized leakage currents in GaN-on-sapphire pn-diodes. [PDF]

Sci Rep
Kinstler AD, Neumann R, Taylor AA, Besendörfer S, Meissner E, Weingärtner R, Brunner F, Brusaterra E, Bahat Treidel E, Schulze J.   +9 more
europepmc   +1 more source

Systematic Study of Fermi‐Level Pinning at Crystalline Metal/GaN Interfaces: First‐Principles Calculations and Diode Characterization

Rare Metals, EarlyView.
ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu, Wen Ji, Jiaren Feng, Ming Jiang, Chunmin Cheng, Wei Yu, Hailing Guo, Baikui Li, Hui Li, Zhaofu Zhang, Xi Tang   +10 more
wiley   +1 more source