Results 261 to 270 of about 40,433 (286)
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Avalanche breakdown in read diodes and pin diodes
Solid-State Electronics, 1968Abstract The avalanche breakdown voltages, VB, for Ge and Si Read (p+nin+ or n+pip+) and pin diodes have been evaluated numerically. For the idealized Read diode the static characteristics of the avalanche region, namely the breakdown field, the width of the avalanche region and the voltage drop, VA, across the avalanche region have also been ...
G. Gibbons, S.M. Sze
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Optically activated pin diode switch
IEEE Conference Record of the 1988 Eighteenth Power Modulator Symposium, 2003The authors discuss the design, fabrication, and application of optically activated switches. A 0.25 m-thick Si pin diode, 3.0 mm in diameter, was tested using an 808 nm 2-D diode laser array measuring about 2 mm*5 mm as an optical source. Preliminary testing of the diode has demonstrated a holding voltage of 1000 V and a conduction of 10 A upon ...
A. Rosen +8 more
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Numerical Modelling of PIN Diodes
IMA Journal of Numerical Analysis, 1984Summary: The coupled non-linear partial differential equations describing the behaviour of PIN diodes are solved using a conservative finite-difference scheme. For such problems the conservation of certain quantities is particularly important and the consistency of the numerical scheme is demonstrated.
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1967 G-MTT International Microwave Symposium Digest, 1967
Conventional high power diode limiters use a multiplicity of varactor diodes in various microwave circuit configurations. The higher power handling PIN diode is normally unsuitable as a passive limiter due to its slow speed of response. The I region thickness of this PIN ranges between one and five mils with a voltage breakdown range of 200 to 1000 ...
P. Basken, K.E. Mortenson, N. Brown
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Conventional high power diode limiters use a multiplicity of varactor diodes in various microwave circuit configurations. The higher power handling PIN diode is normally unsuitable as a passive limiter due to its slow speed of response. The I region thickness of this PIN ranges between one and five mils with a voltage breakdown range of 200 to 1000 ...
P. Basken, K.E. Mortenson, N. Brown
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Microstrip PIN diode microwave switch
Radioelectronics and Communications Systems, 2011A possibility of creating narrow-band electrically controlled microwave breakers and switches with enhanced attenuation level in the blocking mode has been considered. The specified devices are based on the structure containing a short-circuited microstrip link with connected capacitor and the loop coupler, in the center of which is located a PIN diode.
Usanov, Dmitry A. +2 more
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High speed high voltage PIN diode driver
IEEE International Symposium on Industrial Electronics. Proceedings. ISIE'98 (Cat. No.98TH8357), 2002A driver circuit for an RF PIN diode switch is described, the circuit features an efficient means of removing stored charge from the PIN diode, ensuring rapid switching between the forward and reverse biased states and low current consumption from the HV supply.
van Niekerk C., van der Walt P.W.
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Noise characterization of a-Si:H pin diodes
Journal of Non-Crystalline Solids, 2006Abstract Dark current noise power spectral density of a series of a-Si:H pin diodes with different i layer thicknesses (400 and 130 nm) and front contact material (SnO2 and Cr) was measured at different forward and reverse bias. Considering static and dynamic properties of the measurement system and diodes themselves, parameters of thermal, shot and ...
Jankovec, M. +3 more
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Physical Modelling of 4H-SiC PiN Diodes
Materials Science Forum, 2012With the recent technological advances in 4H-SiC PiN diode fabrication, simulation tools which enable the accurate and rapid prediction of losses of such devices in power electronics circuits will be increasingly sought-after. To this end, a physical electro-thermal model of the 4H-SiC PiN diode has been developed, which facilitates device optimization
Craig A. Fisher +7 more
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1982
The selection of a PIN to perform a particular microwave switching function begins with the choice of the size of the I region — specifically, its thickness, W, and cross sectional area, A. In practice, however, this characterization is usually accomplished using the related variables junction capacitance, CJ, which depends upon both A and W, and bulk ...
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The selection of a PIN to perform a particular microwave switching function begins with the choice of the size of the I region — specifically, its thickness, W, and cross sectional area, A. In practice, however, this characterization is usually accomplished using the related variables junction capacitance, CJ, which depends upon both A and W, and bulk ...
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Transient response of PIN limiter diodes
IEEE MTT-S International Microwave Symposium Digest, 2003Results of experimental and theoretical studies have determined which physical parameters of PIN diode junctions control their dynamic responses as limiters to fast-risetime microwave pulses. Both RF and DC dynamic impedance measurements were made and compared, with good agreement, to theoretical calculations which model both the junction and intrinsic
R.J. Tan, A.L. Ward, R. Kaul
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