Results 161 to 170 of about 658,048 (195)

Computation of the Area of Memristor Pinched Hysteresis Loop

IEEE Transactions on Circuits and Systems II: Express Briefs, 2012
It is well known that the memristor driven by a periodical voltage or current exhibits pinched v - i hysteresis loop. A novel finding is published in this brief, namely, that the area within the loop is directly related to the value of action potential, which was introduced by Leon Chua in his original work from 1971.
Dalibor Biolek, Viera Biolková, Zdeněk Biolek   +2 more
exaly   +2 more sources

How Can the Hysteresis Loop of the Ideal Memristor Be Pinched?

IEEE Transactions on Circuits and Systems II: Express Briefs, 2014
The hysteresis loop pinched at the origin of the v-i characteristic is the well-known fingerprint of the memristor excited by sinusoidal signal. This brief generalizes the present knowledge of the parameters of the pinched hysteresis loop for a periodical zero-dc driving signal described by an odd function of time.
Dalibor Biolek, Zdeněk Biolek
exaly   +2 more sources

Memristor pinched hysteresis loops: Touching points, Part II

2014 International Conference on Applied Electronics, 2014
Crossing-type and non-crossing-type touching points of higher orders of a pair of arms of memristor pinched hysteresis loop are analyzed. Mathematical conditions of the occurrence of these points are derived for ideal voltage-controlled memristor driven by the sinusoidal voltage.
Zdenek Kolka, Dalibor Biolek, Viera Biolková   +2 more
exaly   +2 more sources

Correlation Between the Theory of Lissajous Figures and the Generation of Pinched Hysteresis Loops in Nonlinear Circuits

IEEE Transactions on Circuits and Systems I: Regular Papers, 2019
In this paper, the application of the theory of Lissajous figures to the creation of pinched hysteresis loops, considered to be a characteristic of memristive systems, is demonstrated and experimentally verified using designed electronic circuits in the form of an input impedance.
Costas Psychalinos, Brent J Maundy, Ahmed S Elwakil   +2 more
exaly   +3 more sources

Computation of Pinched Hysteresis Loop Area From Memristance-vs-State Map

IEEE Transactions on Circuits and Systems II: Express Briefs, 2019
The voltage-current characteristic of memristor driven by sinusoidal signal has the shape of hysteresis loop pinched at the origin. The lobe area of the hysteresis loop has been computed so far either from the voltage-current plane for all types of memristors or from the constitutive relation in the flux-charge plane of ideal memristor.
Staniŝa Dautovic, Anamarija Juhas
exaly   +3 more sources

Computing Areas of Pinched Hysteresis Loops of Mem-Systems in OrCAD PSPICE

Applied Mechanics and Materials, 2013
The pinched hysteresis loop belongs to the fingerprints of the so-called mem-systems, their well-known special cases being memristors. The memory effect of the system is determined by the area of the curve lobes which gradually decrease with increasing repeating frequency of the excitation signal.
Zdenek Kolka, Dalibor Biolek, Viera Biolková   +2 more
exaly   +2 more sources

Characters of Pinched Hysteresis Loops for Memristors

Journal of Computational and Theoretical Nanoscience, 2016
Junwei Sun, Yanfeng Wang
exaly   +2 more sources

Area of Pinched Hysteresis Loops for Current-Controlled Memristor and Voltage-Controlled Memristor

Journal of Computational and Theoretical Nanoscience, 2015
Guangzhao Cui, Junwei Sun, Xuncai Zhang
exaly   +2 more sources

Pinched P–E hysteresis loops of KSr2Nb5O15 ferroelectric ceramics

Materials Science and Engineering: B, 2021
Abstract Pinched polarization–electric field (P–E) loop was reported in many perovskites, while it is rarely observed in tungsten bronze structures. Here, the KSr2Nb5O15 (KSN) ceramics were prepared by using the KSN calcined and microcrystalline powder as raw materials. Among them, the KSN microcrystalline were fabricated by the molten salt synthesis,
Liangliang Liu, Yongqiang Wang, Zhaoping Hou, Rui Lv   +3 more
openaire   +1 more source